Inventor

Ung-hwan Pi

Inventor

Seoul, KR

Overview

2006–2021

Patent span

Electricity

Primary field (CPC H)

Patents· 35 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

G11Cprimary

G11CStatic stores20%

H10NElectric solid-state devices not otherwise provided for18%

H10BElectronic memory devices16%

H01LSemiconductor devices11%

H10DInorganic electric semiconductor devices5%

Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests5%

G11BInformation storage based on relative movement between record carrier and transducer5%

H03BGeneration of oscillations, directly or by frequency-changing, by circuits employing active elements which operate in a non-switching manner5%

B82YSpecific uses or applications of nanostructures4%

H10KOrganic electric solid-state devices3%

PatentTitleYear

11,121,309Magnetic memory devices including magnetic tunnel junctions2021 11,088,319Magnetic tunnel junction including a free layer structure and magnetic memory device comprising the same2021 11,004,900Magnetoresistive random access memory device and method of manufacturing the same2021 10,910,552Magnetic memory device, method for manufacturing the same, and substrate treating apparatus2021 10,862,025Magnetic memory devices2020 10,825,497Semiconductor device including spin-orbit torque line and method of operating the same2020 10,553,790Method of manufacuring a magnetic memory device2020 10,128,433Magnetic memory device2018 9,570,675'Magnetoresistive structures, magnetic random-access memory devices including the same and methods of manufacturing the magnetoresistive structure'2017 9,530,478'Memory device using spin hall effect and methods of manufacturing and operating the memory device'2016 9,508,925'Magnetic memory device'2016 9,437,654'Magnetic memory devices'2016 9,236,105'Magnetic memory devices and methods of writing data to the same'2016 9,230,623'Magnetic memory devices and methods of operating the same'2016 8,848,432'Magnetoresistive elements and memory devices including the same'2014 8,847,692'Oscillators and method of operating the same'2014 8,836,057'Magnetoresistive elements having protrusion from free layer and memory devices including the same'2014 8,803,266'Storage nodes, magnetic memory devices, and methods of manufacturing the same'2014 8,729,647'Thermally stable magnetic tunnel junction cell and memory device including the same'2014 8,614,014'Tracks including magnetic layer and magnetic memory devices comprising the same'2013 8,598,957'Oscillators and methods of manufacturing and operating the same'2013 8,537,506'Information storage device with domain wall moving unit and magneto-resistive device magnetization arrangement'2013 8,525,601'Oscillators using magnetic domain wall and methods of operating the same'2013 8,427,247'Oscillators and methods of operating the same'2013 8,427,246'Oscillators and methods of manufacturing and operating the same'2013 8,421,545'Oscillators and methods of operating the same'2013 8,254,164'Semiconductor device using magnetic domain wall movement'2012 8,233,305'Magnetic structures, information storage devices including magnetic structures, methods of manufacturing and methods of operating the same'2012 8,144,503'Information storage device and method of operating the same'2012 8,130,530'Information storage devices using magnetic domain wall movement and methods of operating the same'2012 7,924,593'Information storage devices and methods of operating the same'2011 7,537,883'Method of manufacturing nano size-gap electrode device'2009 7,436,033'Tri-gated molecular field effect transistor and method of fabricating the same'2008 7,413,973'Method for manufacturing nano-gap electrode device'2008 7,138,331'Method for manufacturing nano-gap electrode device'2006

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2006–2009Based in Daejeon, KR· patent location history

2011–2021Patents assigned to SAMSUNG ELECTRONICS CO LTD (30)· patent assignee history

2011–2017Based in Seoul, KR· patent location history

2012–2017Patents assigned to LEE SUNG-CHUL (19)· patent assignee history

2012–2017Patents assigned to PI UNG-HWAN (19)· patent assignee history

2012–2017Patents assigned to KIM KWANG-SEOK (13)· patent assignee history

2013–2017Patents assigned to KIM KEE-WON (11)· patent assignee history

2016–2021Based in Hwaseong-si, KR· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
SAMSUNG ELECTRONICS CO LTD	30	2011–2021
LEE SUNG-CHUL	19	2012–2017
PI UNG-HWANself	19	2012–2017
KIM KWANG-SEOK	13	2012–2017
KIM KEE-WON	11	2013–2017

Locations

Location	Patents	Span
Seoul, KR	21	2011–2017
Hwaseong-si, KR	10	2016–2021
Daejeon, KR	4	2006–2009