LexDanaLexDanabeta
Inventor

Tsuneo Inaba

Inventor
Kamakura, JP

Overview

71→
Patents
1997–2020
Patent span
Physics
Primary field (CPC G)

Patents· 71 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

G11Cprimary
G11CStatic stores56%
H10BElectronic memory devices19%
H01LSemiconductor devices6%
H10NElectric solid-state devices not otherwise provided for6%
H10DInorganic electric semiconductor devices3%
B82YSpecific uses or applications of nanostructures2%
G06FElectric digital data processing2%
H03KPulse technique2%
H03LAutomatic control, starting, synchronisation or stabilisation of generators of electronic oscillations or pulses2%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h102%
PatentTitleYear
10,854,253Magnetic storage device with voltage generator that varies voltages according to temperature202010,490,640Semiconductor memory device201910,446,204Semiconductor memory device201910,446,739Semiconductor memory device201910,418,099Resistance change type memory201910,411,071Semiconductor storage device201910,347,690Semiconductor memory device with efficient inclusion of control circuits201910,325,640Magnetoresistive memory device with different write pulse patterns201910,325,638Magnetic storage device with voltage generator that varies voltages according to temperature201910,170,570Semiconductor memory device201910,020,040Semiconductor memory device20189,865,345'Electronic device including a semiconductor memory having memory arrays with variable resistance storage elements and a bias voltage generator arranged between the arrays'20189,741,434'Resistance change memory'20179,728,239'Semiconductor memory device'20179,583,537'Resistance-change semiconductor memory'20179,548,111'Memory device'20179,535,834'Electronic device including memory arrays with variable resistance storage elements arranged on different sides of a word line driving unit'20179,263,114'Electronic device'20169,245,607'Resistance-change semiconductor memory'20169,183,951'Resistance change memory and test method of the same'20159,177,641'Memory device'20159,007,821'Semiconductor storage device'20158,947,920'Memory device'20158,879,310'Semiconductor storage device'20148,716,819'Magnetic random access memory'20148,681,538'Semiconductor storage device'20148,395,933'Resistance-change semiconductor memory'20138,274,826'NAND type flash memory'20128,174,890'Non-volatile semiconductor storage device'20128,174,874'Semiconductor memory device'20128,154,905'Semiconductor memory device having a resistive memory element'20128,120,948'Data writing method for magnetoresistive effect element and magnetic memory'20128,111,540'Semiconductor memory device'20128,097,875'Semiconductor memory device'20128,097,903'Semiconductor memory device'20127,986,575'Semiconductor memory device and redundancy method therefor'20117,916,522'Semiconductor memory device'20117,864,563'Magnetic random access memory'20117,813,159'Semiconductor memory device and data write and read methods of the same'20107,800,935'Resistance change memory device'20107,755,077'Semiconductor memory device'20107,629,637'Magnetic random access memory and write method thereof'20097,545,672'Spin injection write type magnetic memory device'20097,529,113'Magnetic storage device'20097,471,549'Semiconductor memory device'20087,359,234'Semiconductor memory device'20087,269,060'Magnetic random access memory'20077,110,285'Magnetic memory device'20067,046,546'Semiconductor memory device'20067,006,374'Magnetic memory device and method of reading information'20066,914,808'Magnetoresistive random access memory device'20056,906,979'Semiconductor memory device having bit line kicker'20056,894,923'Magnetic memory device'20056,754,122'Semiconductor memory device having overdriven bit-line sense amplifiers'20046,731,149'Synchronizing circuit for generating a signal synchronizing with a clock signal'20046,661,734'Semiconductor memory device'20036,650,590'Semiconductor memory device with reduced its chip area and power consumption'20036,452,860'Semiconductor memory device having segment type word line structure'20026,404,698'Semiconductor memory device having column redundancy function'20026,359,480'Synchronizing circuit for generating a signal synchronizing with a clock signal'20026,288,927'Semiconductor memory device with column gate and equalizer circuitry'20016,181,618'Dynamic type RAM'20016,097,660'Semiconductor memory device'20006,094,390'Semiconductor memory device with column gate and equalizer circuitry'20006,046,924'Semiconductor memory device having a sense amplifier region formed in a triple-well structure'20006,034,914'Semiconductor memory device having column redundancy function'20006,002,636'Semiconductor memory drive capable of canceling power supply noise'19995,903,022'Semiconductor memory device having improved word line arrangement in a memory cell array'19995,761,109'Semiconductor memory device having folded bit line array and an open bit line array with imbalance correction'19985,703,817'Semiconductor memory device'19975,610,868'Semiconductor memory device'1997

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1997–2017Patents assigned to TOSHIBA KK (55)· patent assignee history
1997–1999Based in Ichikawa, JP· patent location history
1999–2004Based in Yokohama, JP· patent location history
2003–2020Based in Kamakura, JP· patent location history
2012–2017Patents assigned to INABA TSUNEO (17)· patent assignee history
2015–2017Patents assigned to TAKAHASHI MASAHIRO (5)· patent assignee history
2015–2017Based in Seongnam-si, KR· patent location history
2016–2018Patents assigned to SK HYNIX INC (5)· patent assignee history
2016–2018Based in Tokyo, JP· patent location history
2018–2020Patents assigned to TOSHIBA MEMORY CORP (12)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
TOSHIBA KK551997–2017
INABA TSUNEOself172012–2017
TOSHIBA MEMORY CORP122018–2020
SK HYNIX INC52016–2018
TAKAHASHI MASAHIRO52015–2017
Locations
LocationPatentsSpan
Kamakura, JP472003–2020
Yokohama, JP101999–2004
Seongnam-si, KR52015–2017
Ichikawa, JP41997–1999
Tokyo, JP32016–2018