Inventor
TSUCHING YANG
Inventor
TW
Overview
Patents· 28 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Bprimary
H10BElectronic memory devices33%
H10DInorganic electric semiconductor devices24%
H01LSemiconductor devices22%
G11CStatic stores9%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h106%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h106%
PatentTitleYear
12,471,346Memory array isolation structures202512,414,295Semiconductor memory structure and method for forming the same202512,382,639Three-dimensional memory device and method202512,376,310Memory cell having source or drain electrode with kink portion, memory array and manufacturing method thereof202512,363,907Memory device comprising conductive pillars202512,356,628Memory device and method for making same202512,336,183Three-dimensional ferroelectric random access memory devices and methods of forming202512,302,562Semiconductor structure and method of forming the same202512,288,820Transistor, integrated circuit, and manufacturing method of transistor202512,272,750Memory array channel regions202512,218,250Oxide semiconductor transistor structure in 3-d device and methods for forming the same202512,219,777Memory array source/drain electrode structures202512,144,182Memory device and method for making same202412,069,863Method of forming memory device comprising conductive pillars202412,068,245Memory device, semiconductor device, and manufacturing method thereof202412,058,860Memory device202411,903,214Three-dimensional ferroelectric random access memory devices and methods of forming202411,903,213Memory device and method for making same202411,862,726Transistor, integrated circuit, and manufacturing method of transistor202411,856,781Three-dimensional memory device and method202311,729,987Memory array source/drain electrode structures202311,729,988Memory device comprising conductive pillars and method of forming the same202311,721,767Oxide semiconductor transistor structure in 3-D device and methods of forming the same202311,710,790Memory array channel regions202311,696,448Memory device and method of forming the same202311,640,974Memory array isolation structures202311,569,165Memory cell array, semiconductor device including the same, and manufacturing method thereof202311,545,507Memory device and method for making same2023Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2023–2025Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (28)· patent assignee history
2023–2025Based in TW· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TAIWAN SEMICONDUCTOR MFG CO LTD | 28 | 2023–2025 |
Locations
| Location | Patents | Span |
|---|---|---|
| TW | 28 | 2023–2025 |