Inventor
Jong Kyun You
Inventor
Ansan-si, KR
Overview
Patents· 29 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Hprimary
H10HInorganic light-emitting semiconductor devices having potential barriers41%
H01LSemiconductor devices27%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1014%
B01DSeparation8%
Y02CCapture, storage, sequestration or disposal of greenhouse gases [ghg]8%
H10DInorganic electric semiconductor devices2%
PatentTitleYear
10,749,074Vertical type light emitting diode having groove disposed under the first conductivity type semiconductor layer202010,326,050Light-emitting device with improved light extraction efficiency201910,290,769Vertical type light emitting diode having groove disposed under the first conductivity type semiconductor layer201910,283,675Vertical light emitting diode having electrode configuration and light emitting diode package having the same201910,249,797High efficiency light emitting diode and method of fabricating the same201910,134,956Light emitting diode and manufacturing method thereof20189,962,655Acid gas capture system and method saving energy by cooling absorbent, which has passed reboiler, by means of steam condensate20189,956,518Energy-saving acid gas capture system and method20189,757,681'Low energy-type acid gas capture system and method using recirculation of absorbent'20179,757,680'System and method for separation and recovery of acid gas'20179,579,599'Energy-saving system and method of capturing acidic gas by using separated water'20179,455,378'High efficiency light emitting diode and method for fabricating the same'20169,431,377'Light emitting device and method of fabricating the same'20169,362,458'Light emitting diode and method of fabricating the same'20169,362,449'High efficiency light emitting diode and method of fabricating the same'20169,337,175'Light emitting device and method of fabricating the same'20169,306,120'High efficiency light emitting diode'20169,159,870'Method of fabricating gallium nitride based semiconductor device'20159,142,715'Light emitting diode'20159,059,015'Light emitting device and method of fabricating the same'20159,029,888'High efficiency light emitting diode and method of fabricating the same'20158,791,483'High efficiency light emitting diode and method for fabricating the same'20148,772,805'High efficiency light emitting diode and method for fabricating the same'20148,648,369'Light emitting device and method of fabricating the same'20148,624,159'Method of fabricating light emitting diode using laser lift-off technique and laser lift-off apparatus having heater'20148,618,565'High efficiency light emitting diode'20138,410,506'High efficiency light emitting diode'20138,288,781'Light emitting device and method of fabricating the same'20128,153,509'Method of fabricating light emitting diode using laser lift-off technique and laser lift-off apparatus having heater'2012Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2012–2015Patents assigned to LEE JOON HEE (11)· patent assignee history
2012–2015Patents assigned to YOU JONG KYUN (11)· patent assignee history
2012–2015Patents assigned to KIM CHANG YOUN (10)· patent assignee history
2012–2015Patents assigned to SEOUL OPTO DEVICE CO LTD (8)· patent assignee history
2012–2020Based in Ansan-si, KR· patent location history
2014–2020Patents assigned to SEOUL VIOSYS CO LTD (17)· patent assignee history
2017–2018Based in Daejeon, KR· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| SEOUL VIOSYS CO LTD | 17 | 2014–2020 |
| LEE JOON HEE | 11 | 2012–2015 |
| YOU JONG KYUNself | 11 | 2012–2015 |
| KIM CHANG YOUN | 10 | 2012–2015 |
| SEOUL OPTO DEVICE CO LTD | 8 | 2012–2015 |
Locations
| Location | Patents | Span |
|---|---|---|
| Ansan-si, KR | 24 | 2012–2020 |
| Daejeon, KR | 5 | 2017–2018 |