Inventor

Shuang-Ji Tsai

Inventor

Tainan, TW

Overview

43→

Patents

2013–2020

Patent span

Electricity

Primary field (CPC H)

Patents· 43 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Fprimary

H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation29%

H01LSemiconductor devices29%

H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1013%

Y02EReduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution5%

Y02PClimate change mitigation technologies in the production or processing of goods5%

E05BLocks4%

E05CBolts or fastening devices for wings, specially for doors or windows4%

G02BOptical elements, systems or apparatus4%

H10DInorganic electric semiconductor devices4%

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h104%

PatentTitleYear

10,777,539Seal-ring structure for stacking integrated circuits2020 10,566,378Back side illuminated image sensor with reduced sidewall-induced leakage2020 10,535,696Pad structure exposed in an opening through multiple dielectric layers in BSI image sensor chips2020 10,535,697Structure and method for 3D Image sensor2020 10,475,772Seal-ring structure for stacking integrated circuits2019 10,157,895Seal-ring structure for stacking integrated circuits2018 10,062,728Image sensor device and method2018 9,972,603Seal-ring structure for stacking integrated circuits2018 9,837,464Backside structure and methods for BSI image sensors2017 9,812,487'Structure and method for 3D image sensor'2017 9,761,629'Image sensor device and method'2017 9,653,508'Pad structure exposed in an opening through multiple dielectric layers in BSI image sensor chips'2017 9,627,430'Method and apparatus for low resistance image sensor contact'2017 9,613,996'Backside structure and methods for BSI image sensors'2017 9,576,999'Backside structure and methods for BSI image sensors'2017 9,570,497'Back side illuminated image sensor having isolated bonding pads'2017 9,525,003'Structure and method for 3D image sensor'2016 9,455,288'Image sensor structure to reduce cross-talk and improve quantum efficiency'2016 9,401,380'Backside structure and methods for BSI image sensors'2016 9,362,329'Pad structure exposed in an opening through multiple dielectric layers in BSI image sensor chips'2016 9,356,058'Backside structure for BSI image sensor'2016 9,305,966'Backside structure and method for BSI image sensors'2016 9,287,312'Imaging sensor structure and method'2016 9,245,912'Method and apparatus for low resistance image sensor contact'2016 9,224,770'Image sensor device and method'2015 9,184,207'Pad structures formed in double openings in dielectric layers'2015 9,165,970'Back side illuminated image sensor having isolated bonding pads'2015 9,147,702'Image sensor for mitigating dark current'2015 9,142,690'Semiconductor device having a bonding pad and shield structure and method of manufacturing the same'2015 9,059,061'Structure and method for 3D image sensor'2015 9,041,206'Interconnect structure and method'2015 9,013,022'Pad structure including glue layer and non-low-k dielectric layer in BSI image sensor chips'2015 8,987,855'Pad structures formed in double openings in dielectric layers'2015 8,969,991'Backside structure and methods for BSI image sensors'2015 8,952,497'Scribe lines in wafers'2015 8,946,849'BSI image sensor chips with separated color filters and methods for forming the same'2015 8,941,204'Apparatus and method for reducing cross talk in image sensors'2015 8,736,006'Backside structure for a BSI image sensor device'2014 8,710,612'Semiconductor device having a bonding pad and shield structure of different thickness'2014 8,709,854'Backside structure and methods for BSI image sensors'2014 8,664,736'Bonding pad structure for a backside illuminated image sensor device and method of manufacturing the same'2014 8,628,990'Image device and methods of forming the same'2014 8,435,824'Backside illumination sensor having a bonding pad structure and method of making the same'2013

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2013–2016Patents assigned to TAIWAN SEMICONDUCTOR MFG (24)· patent assignee history

2013–2016Patents assigned to LIU JEN-CHENG (13)· patent assignee history

2013–2016Patents assigned to TSAI SHUANG-JI (13)· patent assignee history

2013–2016Patents assigned to YAUNG DUN-NIAN (13)· patent assignee history

2013–2020Based in Guiren Township, TW· patent location history

2014–2020Based in Tainan, TW· patent location history

2016–2020Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (19)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
TAIWAN SEMICONDUCTOR MFG	24	2013–2016
TAIWAN SEMICONDUCTOR MFG CO LTD	19	2016–2020
LIU JEN-CHENG	13	2013–2016
TSAI SHUANG-JIself	13	2013–2016
YAUNG DUN-NIAN	13	2013–2016

Locations

Location	Patents	Span
Tainan, TW	34	2014–2020
Guiren Township, TW	9	2013–2020