Inventor
Beichao Zhang
Inventor
Singapore, SG
Overview
Patents· 7 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Wprimary
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1050%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1020%
G06FElectric digital data processing10%
H04LTransmission of digital information, e.g. telegraphic communication10%
H10DInorganic electric semiconductor devices10%
PatentTitleYear
11,113,085Virtual network abstraction20217,670,946'Methods to eliminate contact plug sidewall slit'20107,601,607'Protruded contact and insertion of inter-layer-dielectric material to match damascene hardmask to improve undercut for low-k interconnects'20097,323,408'Metal barrier cap fabrication by polymer lift-off'20087,153,766'Metal barrier cap fabrication by polymer lift-off'20067,045,455'Via electromigration improvement by changing the via bottom geometric profile'20066,653,227'Method of cobalt silicidation using an oxide-Titanium interlayer'2003Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2003–2010Patents assigned to CHARTERED SEMICONDUCTOR MFG (6)· patent assignee history
2003–2010Based in Singapore, SG· patent location history
2021Patents assigned to NICIRA INC (1)· patent assignee history
2021Based in Beijing, CN· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| CHARTERED SEMICONDUCTOR MFG | 6 | 2003–2010 |
| NICIRA INC | 1 | 2021 |
Locations
| Location | Patents | Span |
|---|---|---|
| Singapore, SG | 6 | 2003–2010 |
| Beijing, CN | 1 | 2021 |