Inventor
William G. Petro
Inventor
San Jose, CA, US
Overview
Patents· 4 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Pprimary
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1031%
C23CCoating metallic material15%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1015%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests15%
B08BCleaning in general8%
H01JElectric discharge tubes or discharge lamps8%
H10DInorganic electric semiconductor devices8%
PatentTitleYear
6,645,353'Approach to optimizing an ILD argon sputter process'20035,326,723'Method for improving stability of tungsten chemical vapor deposition'19945,260,236'UV transparent oxynitride deposition in single wafer PECVD system'19934,762,728'Low temperature plasma nitridation process and applications of nitride films formed thereby'1988Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1988Patents assigned to FAIRCHILD SEMICONDUCTOR (1)· patent assignee history
1988Based in Cupertino, CA, US· patent location history
1993–2003Patents assigned to INTEL CORP (3)· patent assignee history
1993–2003Based in San Jose, CA, US· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| INTEL CORP | 3 | 1993–2003 |
| FAIRCHILD SEMICONDUCTOR | 1 | 1988 |
Locations
| Location | Patents | Span |
|---|---|---|
| San Jose, California, US | 3 | 1993–2003 |
| Cupertino, California, US | 1 | 1988 |