LexDanaLexDanabeta
Inventor

Hiromichi Godo

Inventor
Kanagawa, JP

Overview

121→
Patents
2007–2021
Patent span
Electricity
Primary field (CPC H)

Patents· 121 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary
H10DInorganic electric semiconductor devices36%
H01LSemiconductor devices19%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h108%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h106%
H10KOrganic electric solid-state devices6%
H10BElectronic memory devices5%
H05BElectric heating3%
H10HInorganic light-emitting semiconductor devices having potential barriers3%
Y10TTechnical subjects covered by former us classification3%
G06FElectric digital data processing2%
PatentTitleYear
10,910,499Semiconductor device, power diode, and rectifier202110,903,206Semiconductor device and electronic device202110,862,177Semiconductor device and electronic device202010,749,033Semiconductor device and method for manufacturing semiconductor device202010,615,283Semiconductor device, power diode, and rectifier202010,411,013Semiconductor device and memory device201910,296,157Display device and electronic device201910,290,720Semiconductor device and method for manufacturing the same201910,290,908Semiconductor device and electronic device201910,270,056Display device and method of manufacturing thereof201910,204,898Semiconductor device and electronic device201910,084,072Semiconductor device and method for manufacturing the same20189,997,638Semiconductor device and manufacturing method thereof20189,887,297'Semiconductor device comprising oxide semiconductor layer in which thickness of the oxide semiconductor layer is greater than or equal to width of the oxide semiconductor layer'20189,859,443'Field-effect transistor, and memory and semiconductor circuit including the same'20189,852,108Processor including first transistor and second transistor20179,799,773'Transistor and semiconductor device'20179,780,329'Display device including sealing material'20179,761,588'Semiconductor device having a wide-gap semiconductor layer in an insulating trench'20179,748,401'Transistor and semiconductor device'20179,711,610'Semiconductor device having oxide semiconductor layer'20179,685,562'Semiconductor device, power diode, and rectifier'20179,660,102'Semiconductor device and manufacturing method thereof'20179,601,631'Semiconductor device and method for manufacturing the same'20179,601,633'Semiconductor device'20179,570,628'Semiconductor device'20179,548,395'Field-effect transistor including oxide semiconductor, and memory and semiconductor circuit including the same'20179,543,445'Semiconductor device with oxide semiconductor layer'20179,508,953'Display device'20169,431,427'Semiconductor device comprising oxide semiconductor layer'20169,391,209'Semiconductor device'20169,324,877'Semiconductor device, power diode, and rectifier'20169,306,073'Semiconductor device and method for manufacturing semiconductor device'20169,293,598'Semiconductor device having an oxide semiconductor layer'20169,287,408'Field-effect transistor, and memory and semiconductor circuit including the same'20169,257,670'Display device'20169,236,428'Semiconductor element, method for manufacturing the semiconductor element, and semiconductor device including the semiconductor element'20169,209,092'Semiconductor device with a wide-gap semiconductor layer on inner wall of trench'20159,202,929'Thin film transistor and method for manufacturing the same'20159,190,528'Semiconductor device and manufacturing method thereof'20159,184,299'Semiconductor device'20159,136,188'Manufacturing method and test method of semiconductor device'20159,130,051'Semiconductor device including semiconductor layer over insulating layer and manufacturing method thereof'20159,064,899'Semiconductor device and manufacturing method thereof'20159,048,130'Semiconductor device and manufacturing method thereof'20159,029,864'Semiconductor device and manufacturing method thereof'20159,006,025'Semiconductor device and method for manufacturing the same'20158,962,386'Semiconductor device and method for manufacturing the same'20158,957,462'Semiconductor device comprising an N-type transistor with an N-type semiconductor containing nitrogen as a gate'20158,927,981'Semiconductor device and method for manufacturing the same'20158,916,866'Semiconductor device'20148,912,016'Manufacturing method and test method of semiconductor device'20148,901,806'Display device and method of manufacturing thereof'20148,895,976'Transistor and semiconductor device'20148,877,569'Method of manufacturing thin film transistor with oxide semiconductor using sputtering method'20148,860,021'Semiconductor element, method for manufacturing the semiconductor element, and semiconductor device including the semiconductor element'20148,853,690'Semiconductor device with oxide semiconductor layer'20148,835,917'Semiconductor device, power diode, and rectifier'20148,809,851'Semiconductor device'20148,809,870'Semiconductor device'20148,779,432'Semiconductor device and manufacturing method thereof'20148,759,820'Semiconductor device'20148,754,409'Field-effect transistor, and memory and semiconductor circuit including the same'20148,704,267'Light-emitting display device'20148,704,216'Semiconductor device and manufacturing method thereof'20148,704,219'Method for manufacturing semiconductor device'20148,680,521'Semiconductor device'20148,680,679'Semiconductor device and method for manufacturing semiconductor device'20148,664,652'Semiconductor device and method for manufacturing the same'20148,664,653'Semiconductor device and method for manufacturing semiconductor device'20148,643,009'Transistor, semiconductor device including the transistor, and manufacturing method of the transistor and the semiconductor device'20148,624,321'Thin film transistor including a microcrystalline semiconductor layer and amorphous semiconductor layer and display device including the same'20148,618,544'Thin film transistor and display device'20138,581,309'Semiconductor device'20138,569,170'Manufacturing method of semiconductor device comprising silicide layer with varied thickness'20138,546,810'Thin film transistor, display device, and electronic appliance'20138,546,811'Semiconductor device'20138,530,333'Semiconductor device and manufacturing method thereof'20138,492,840'Semiconductor device having an oxide semiconductor layer'20138,441,047'Semiconductor device and method for manufacturing the same'20138,436,403'Semiconductor device including transistor provided with sidewall and electronic appliance'20138,420,504'Method for manufacturing semiconductor device'20138,415,667'Semiconductor device'20138,382,545'Method of manufacturing a display device'20138,373,203'Semiconductor device'20138,362,478'Semiconductor device and manufacturing method thereof'20138,350,261'Semiconductor device including a transistor, and manufacturing method of the semiconductor device'20138,344,380'Thin film transistor and display device'20138,305,109'Logic circuit, light emitting device, semiconductor device, and electronic device'20128,294,157'Semiconductor device and manufacturing method thereof'20128,278,657'Transistor, semiconductor device including the transistor, and manufacturing method of the transistor and the semiconductor device'20128,253,138'Thin film transistor and display device having the thin film transistor'20128,247,812'Transistor, semiconductor device including the transistor, and manufacturing method of the transistor and the semiconductor device'20128,179,040'Display device and manufacturing method of display device'20128,174,021'Semiconductor device and method of manufacturing the semiconductor device'20128,143,118'TFT device with channel region above convex insulator portions and source/drain in concave between convex insulator portions'20128,138,063'Manufacturing method of a semiconductor device including a single crystal semiconductor film, and a semiconductor film including impurity'20128,120,030'Thin film transistor and display device'20128,063,403'Thin film transistor and semiconductor device'20118,044,464'Semiconductor device'20117,982,250'Semiconductor device'20117,968,880'Thin film transistor and display device'20117,923,730'Thin film transistor and semiconductor device'20117,867,873'Manufacturing method of a semiconductor substrate using a damaged region'20117,868,328'Semiconductor device having antenna over thin film integrated circuit'20117,842,584'Method for manufacturing semiconductor device'20107,812,348'Thin-film transistor and display device'20107,786,485'Thin-film transistor and display device'20107,745,293'Method for manufacturing a thin film transistor including forming impurity regions by diagonal doping'20107,692,194'Semiconductor device'20107,687,404'Method for manufacturing display device'20107,659,580'Semiconductor device and manufacturing method thereof'20107,598,526'Semiconductor device and manufacturing method thereof'20097,554,265'Display device'20097,532,173'Display device and folding portable terminal'20097,504,327'Method of manufacturing thin film semiconductor device'20097,504,663'Semiconductor device with a floating gate electrode that includes a plurality of particles'20097,486,368'Display device and method of manufacturing thereof'20097,476,908'Light emitting device'20097,466,294'Light emitting device and electric appliance'20087,190,115'Display device having sealing film'2007

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2007–2021Patents assigned to SEMICONDUCTOR ENERGY LAB (120)· patent assignee history
2007–2021Based in Kanagawa, JP· patent location history
2009–2017Based in Atsugi, JP· patent location history
2011–2017Patents assigned to GODO HIROMICHI (52)· patent assignee history
2012–2015Patents assigned to YAMAZAKI SHUNPEI (24)· patent assignee history
2012–2017Patents assigned to KOBAYASHI SATOSHI (7)· patent assignee history
2012–2014Patents assigned to KAWAE DAISUKE (6)· patent assignee history
2012–2021Based in Isehara, JP· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
SEMICONDUCTOR ENERGY LAB1202007–2021
GODO HIROMICHIself522011–2017
YAMAZAKI SHUNPEI242012–2015
KOBAYASHI SATOSHI72012–2017
KAWAE DAISUKE62012–2014
Locations
LocationPatentsSpan
Kanagawa, JP572007–2021
Isehara, JP452012–2021
Atsugi, JP192009–2017