Inventor
Kuo-Hsien Cheng
Inventor
Hsinchu, TW
Overview
Patents· 11 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Bprimary
H10BElectronic memory devices15%
H10DInorganic electric semiconductor devices15%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1015%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1015%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests15%
G02BOptical elements, systems or apparatus5%
G02FOptical devices or arrangements for the control of light by modification of the optical properties of the media of the elements involved therein5%
G05BControl or regulating systems in general5%
G11BInformation storage based on relative movement between record carrier and transducer5%
H01LSemiconductor devices5%
PatentTitleYear
10,921,677Flexible electronic device202110,038,000Memory cell and fabricating method thereof20187,205,634'MIM structure and fabrication process with improved capacitance reliability'20077,072,261'Driving method'20066,577,926'Method of detecting and controlling in-situ faults in rapid thermal processing systems'20036,376,156'Prevent defocus issue on wafer with tungsten coating on back-side'20026,191,035'Recipe design to prevent tungsten (W) coating on wafer backside for those wafers with poly Si on wafer backside'20016,146,991'Barrier metal composite layer featuring a thin plasma vapor deposited titanium nitride capping layer'20006,017,791'Multi-layer silicon nitride deposition method for forming low oxidation temperature thermally oxidized silicon nitride/silicon oxide (no) layer'20005,923,988'Two step thermal treatment procedure applied to polycide structures deposited using dichlorosilane as a reactant'19995,763,303'Rapid thermal chemical vapor deposition procedure for a self aligned, polycide contact structure'1998Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1998–2007Patents assigned to TAIWAN SEMICONDUCTOR MFG (8)· patent assignee history
1998Based in Taichung, TW· patent location history
1999–2021Based in Hsinchu, TW· patent location history
2000–2003Based in Hsin Chu, TW· patent location history
2006Patents assigned to BENQ CORP (1)· patent assignee history
2006Based in I-Lan, TW· patent location history
2007–2018Based in Tainan, TW· patent location history
2018Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (1)· patent assignee history
2021Patents assigned to E INK HOLDINGS INC (1)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TAIWAN SEMICONDUCTOR MFG | 8 | 1998–2007 |
| BENQ CORP | 1 | 2006 |
| E INK HOLDINGS INC | 1 | 2021 |
| TAIWAN SEMICONDUCTOR MFG CO LTD | 1 | 2018 |
Locations
| Location | Patents | Span |
|---|---|---|
| Hsinchu, TW | 5 | 1999–2021 |
| Tainan, TW | 2 | 2007–2018 |
| Hsin Chu, TW | 2 | 2000–2003 |
| I-Lan, TW | 1 | 2006 |
| Taichung, TW | 1 | 1998 |