Inventor
Reinhold Schoerner
Inventor
Grossenseebach, DE
Overview
Patents· 6 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices43%
H01LSemiconductor devices29%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1021%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests7%
PatentTitleYear
10,861,964Semiconductor device with junction termination zone202010,818,749Semiconductor devices and a circuit for controlling a field effect transistor of a semiconductor device202010,541,325Semiconductor device with termination structure including field zones and method of manufacturing202010,014,383Method for manufacturing a semiconductor device comprising a metal nitride layer and semiconductor device20186,936,850'Semiconductor device made from silicon carbide with a Schottky contact and an ohmic contact made from a nickel-aluminum material'20056,117,751'Method for manufacturing a mis structure on silicon carbide (SiC)'2000Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2000Patents assigned to SIEMENS AG (1)· patent assignee history
2000–2020Based in Grossenseebach, DE· patent location history
2005Patents assigned to SICED ELECT DEV GMBH & CO KG (1)· patent assignee history
2018–2020Patents assigned to INFINEON TECHNOLOGIES AG (4)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| INFINEON TECHNOLOGIES AG | 4 | 2018–2020 |
| SICED ELECT DEV GMBH & CO KG | 1 | 2005 |
| SIEMENS AG | 1 | 2000 |
Locations
| Location | Patents | Span |
|---|---|---|
| Grossenseebach, DE | 6 | 2000–2020 |