Inventor

MINGYUAN SONG

Inventor
TW

Overview

33→
Patents
2021–2026
Patent span
Electricity
Primary field (CPC H)

Patents· 33 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Bprimary
H10BElectronic memory devices24%
H10NElectric solid-state devices not otherwise provided for24%
G11CStatic stores19%
H01LSemiconductor devices14%
H10DInorganic electric semiconductor devices4%
G01RMeasuring electric variables3%
H01FMagnets3%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h103%
A61NElectrotherapy2%
H01JElectric discharge tubes or discharge lamps2%
PatentTitleYear
12,563,977Strained ferromagnetic hall metal SOT layer202612,527,002Sot MRAM having dielectric interfacial layer and method forming same202612,495,721Semiconductor device with asymmetrical pinned magnets, and method of manufacture202512,412,723Radiotherapy device and microwave source thereof202512,396,372Semiconductor device and manufacturing method of semiconductor device202512,356,868Magnetic device and magnetic random access memory202512,322,428SOT-MRAM with shared selector202512,317,513Semiconductor device and method for forming the same202512,238,937Magnetic tunnel junction structures and related methods202512,225,734Semiconductor MRAM device and method202512,156,479Memory device and manufacturing method thereof202412,114,510SOT MRAM having dielectric interfacial layer and method forming same202412,075,711Magnetic device and magnetic random access memory202412,041,855Magnetic device and magnetic random access memory202412,022,665Semiconductor device and method for forming the same202411,984,292Radiotherapy device and microwave source thereof202411,963,366Magnetic device and magnetic random access memory202411,805,705Strained ferromagnetic hall metal SOT layer202311,793,087Magnetic tunnel junction structures and related methods202311,778,924Magnetic device and magnetic random access memory202311,723,218Semiconductor device and method for forming the same202311,706,999Semiconductor device and manufacturing method of semiconductor device202311,699,474SOT-MRAM with shared selector202311,678,585Semiconductor device with asymmetrical pinned magnets, and method of manufacture202311,594,575Magnetic tunnel junction structures and related methods202311,502,241Magnetic device and magnetic random access memory202211,469,267SOT MRAM having dielectric interfacial layer and method forming same202211,437,434Magnetic device and magnetic random access memory202211,430,832Semiconductor MRAM device and method202211,302,864Semiconductor device with asymmetrical pinned magnets, and method of manufacture202211,289,143SOT-MRAM with shared selector202211,239,413Magnetic device and magnetic random access memory202211,195,991Magnetic random access memory assisted devices and methods of making2021

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2021–2026Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (31)· patent assignee history
2021–2026Based in TW· patent location history
2024–2025Patents assigned to SHANGHAI UNITED IMAGING HEALTHCARE CO LTD (2)· patent assignee history
2024–2025Based in CN· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
TAIWAN SEMICONDUCTOR MFG CO LTD312021–2026
SHANGHAI UNITED IMAGING HEALTHCARE CO LTD22024–2025
Locations
LocationPatentsSpan
TW312021–2026
CN22024–2025