Inventor
Darius L. Crenshaw
Inventor
Allen, TX, US
Overview
Patents· 20 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices23%
H10BElectronic memory devices16%
H01HElectric switches13%
H01GCapacitors9%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h107%
H01PWaveguides5%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h105%
Y10TTechnical subjects covered by former us classification5%
B81BMicrostructural devices or systems, e.g. micromechanical devices4%
B81CProcesses or apparatus specially adapted for the manufacture or treatment of microstructural devices or systems4%
PatentTitleYear
7,250,334'Metal insulator metal (MIM) capacitor fabrication with sidewall spacers and aluminum cap (ALCAP) top electrode'20077,189,615'Single mask MIM capacitor and resistor with in trench copper drift barrier'20077,115,467'Metal insulator metal (MIM) capacitor fabrication with sidewall barrier removal aspect'20066,977,196'Micro-electromechanical switch fabricated by simultaneous formation of a resistor and bottom electrode'20056,764,872'Microelectromechanical switch'20046,698,082'Micro-electromechanical switch fabricated by simultaneous formation of a resistor and bottom electrode'20046,699,745'Capacitor and memory structure and method'20046,657,832'Mechanically assisted restoring force support for micromachined membranes'20036,642,593'Microelectromechanical switch'20036,638,818'Method of fabricating a dynamic random access memory with increased capacitance'20036,525,396'Selection of materials and dimensions for a micro-electromechanical switch for use in the RF regime'20036,496,352'Post-in-crown capacitor and method of manufacture'20026,376,787'Microelectromechanical switch with fixed metal electrode/dielectric interface with a protective cap layer'20026,197,653'Capacitor and memory structure and method'20016,184,074'Method of fabrication a self-aligned polysilicon/diffusion barrier/oxygen stable sidewall bottom electrode structure for high-K DRAMS'20016,180,446'Method of fabricating an oxygen-stable layer/diffusion barrier/poly bottom electrode structure for high-K DRAMS using disposable-oxide processing'20016,171,898'Method of fabricating an oxygen-stable layer/diffusion barrier/poly bottom electrode structure for high-K-DRAMS using a disposable-oxide processing'20015,998,225'Method of fabricating an oxygen-stable layer/diffusion barrier/poly bottom electrode structure for high-K DRAMs using disposable-oxide processing'19995,770,499'Planarized capacitor array structure for high density memory applications'19985,726,085'Method of fabricating a dynamic random access memory (DRAM) cell capacitor using hemispherical grain (HSG) polysilicon and selective polysilicon etchback'1998Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1998–2007Patents assigned to TEXAS INSTRUMENTS INC (20)· patent assignee history
1998–2003Based in Plano, TX, US· patent location history
1999–2007Based in Allen, TX, US· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TEXAS INSTRUMENTS INC | 20 | 1998–2007 |
Locations
| Location | Patents | Span |
|---|---|---|
| Allen, Texas, US | 17 | 1999–2007 |
| Plano, Texas, US | 3 | 1998–2003 |