Inventor
EUGENE I-CHUN CHEN
Inventor
TW
Overview
Patents· 20 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Lprimary
H01LSemiconductor devices22%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation19%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1016%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1012%
H10DInorganic electric semiconductor devices10%
G02BOptical elements, systems or apparatus5%
Y02PClimate change mitigation technologies in the production or processing of goods5%
B82YSpecific uses or applications of nanostructures3%
H10HInorganic light-emitting semiconductor devices having potential barriers3%
H10KOrganic electric solid-state devices3%
PatentTitleYear
12,532,554Doped semiconductor structure for NIR sensors202612,471,379Multi-function substrate202512,446,333Surface uniformity control in pixel structures of image sensors202512,439,709Image sensor with diffusion barrier structure202512,402,421Surface uniformity control in pixel structures of image sensors202512,369,413Method for forming an image sensor202512,369,352Thin film transfer using substrate with etch stop layer and diffusion barrier layer202512,360,314Photonic semiconductor-on-insulator (SOI) substrate and method for forming the photonic SOI substrate202512,328,965In-situ cap for germanium photodetector202512,136,679Semiconductor device comprising a photodetector with reduced dark current202412,113,071Multi-function substrate202411,955,374Method for forming SOI substrate202411,949,030In-situ cap for germanium photodetector202411,804,531Thin film transfer using substrate with etch stop layer and diffusion barrier layer202311,784,207Method for forming an image sensor202311,749,762Semiconductor device comprising a photodetector with reduced dark current202311,721,794Method for manufacturing reflective structure202311,532,642Multi-function substrate202211,393,866Method for forming an image sensor202211,257,997Semiconductor structure2022Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2022–2026Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (20)· patent assignee history
2022–2026Based in TW· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TAIWAN SEMICONDUCTOR MFG CO LTD | 20 | 2022–2026 |
Locations
| Location | Patents | Span |
|---|---|---|
| TW | 20 | 2022–2026 |