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Inventor

Werner Boullart

Inventor
Binkom, BE

Overview

3→
Patents
2002–2012
Patent span
Electricity
Primary field (CPC H)

Patents· 3 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Pprimary
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1040%
G03FPhotomechanical production of textured or patterned surfaces, e.g. for printing, for processing of semiconductor devices20%
H10DInorganic electric semiconductor devices20%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1020%
PatentTitleYear
8,319,295'Use of F-based gate etch to passivate the high-k/metal gate stack for deep submicron transistor technologies'20127,611,986'Dual damascene patterning method'20096,352,936'Method for stripping ion implanted photoresist layer'2002

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2002Patents assigned to IMEC VZW (1)· patent assignee history
2002Based in Leuven, BE· patent location history
2009–2012Patents assigned to IMEC (2)· patent assignee history
2009–2012Based in Binkom, BE· patent location history
2012Patents assigned to BOULLART WERNER (1)· patent assignee history
2012Patents assigned to COLLAERT NADINE (1)· patent assignee history
2012Patents assigned to DEMAND MARC (1)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
IMEC22009–2012
BOULLART WERNERself12012
COLLAERT NADINE12012
DEMAND MARC12012
IMEC VZW12002
Locations
LocationPatentsSpan
Binkom, BE22009–2012
Leuven, BE12002