Inventor

Neal R. Rueger

Inventor

Boise, ID, US

Overview

2003–2017

Patent span

Electricity

Primary field (CPC H)

Patents· 61 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Pprimary

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1022%

H01JElectric discharge tubes or discharge lamps12%

C23CCoating metallic material9%

H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h109%

B82YSpecific uses or applications of nanostructures5%

H10BElectronic memory devices5%

H10DInorganic electric semiconductor devices5%

B05BSpraying apparatus3%

C01BNon-metallic elements3%

H01LSemiconductor devices3%

PatentTitleYear

9,610,593'Device for positioning nanoparticles'2017 9,257,294'Methods and apparatuses for energetic neutral flux generation for processing a substrate'2016 9,117,766'Method for positioning spacers in pitch multiplication'2015 9,099,272'Field emission devices and methods for making the same'2015 9,061,297'Device for controlling placement of nanoparticles'2015 8,865,598'Method for positioning spacers in pitch multiplication'2014 8,828,883'Methods and apparatuses for energetic neutral flux generation for processing a substrate'2014 8,770,026'Devices comprising nanotubes or nanowires having alterable characteristics and related methods'2014 8,747,557'Devices for positioning carbon nanoparticles, and systems for controlling placement of nanoparticles'2014 8,729,787'Field emission devices and methods for making the same'2014 8,674,602'Plasma-generating structures and display devices'2014 8,609,542'Profiling solid state samples'2013 8,598,041'Method for positioning spacers in pitch multiplication'2013 8,414,787'Electron beam processing device and method using carbon nanotube emitter'2013 8,389,415'Profiling solid state samples'2013 8,274,221'Plasma-generating structures, display devices, and methods of forming plasma-generating structures'2012 8,256,293'Devices comprising nanotubes for use as sensors and/or transducers, and related methods'2012 8,173,550'Method for positioning spacers for pitch multiplication'2012 8,058,130'Method of forming a nitrogen-enriched region within silicon-oxide-containing masses'2011 8,049,514'Integrated circuit inspection system'2011 8,033,884'Methods of forming plasma-generating structures; methods of plasma-assisted etching, and methods of plasma-assisted deposition'2011 8,003,542'Multiple spacer steps for pitch multiplication'2011 8,003,000'Plasma processing, deposition and ALD methods'2011 7,833,427'Electron beam etching device and method'2010 7,819,005'Sensor and transducer devices comprising carbon nanotubes, methods of making and using the same'2010 7,791,071'Profiling solid state samples'2010 7,718,080'Electronic beam processing device and method using carbon nanotube emitter'2010 7,662,648'Integrated circuit inspection system'2010 7,649,316'Assemblies for plasma-enhanced treatment of substrates'2010 7,632,737'Protection in integrated circuits'2009 7,628,855'Atomic layer deposition using electron bombardment'2009 7,569,484'Plasma and electron beam etching device and method'2009 7,560,390'Multiple spacer steps for pitch multiplication'2009 7,557,047'Method of forming a layer of material using an atomic layer deposition process'2009 7,517,558'Methods for positioning carbon nanotubes'2009 7,494,894'Protection in integrated circuits'2009 7,459,757'Transistor structures'2008 7,432,166'Methods of forming a nitrogen enriched region'2008 7,402,526'Plasma processing, deposition, and ALD methods'2008 7,344,948'Methods of forming transistors'2008 7,323,400'Plasma processing, deposition and ALD methods'2008 7,312,857'Method and system for monitoring plasma using optical emission spectrometry'2007 7,279,377'Method and structure for shallow trench isolation during integrated circuit device manufacture'2007 7,276,426'Methods of forming semiconductor constructions'2007 7,273,793'Methods of filling gaps using high density plasma chemical vapor deposition'2007 7,262,555'Method and system for discretely controllable plasma processing'2007 7,255,128'System and method for detecting flow in a mass flow controller'2007 7,202,183'Method of filling gaps and methods of depositing materials using high density plasma chemical vapor deposition'2007 7,189,287'Atomic layer deposition using electron bombardment'2007 7,114,404'System and method for detecting flow in a mass flow controller'2006 7,056,833'Methods of filling gaps and methods of depositing materials using high density plasma chemical vapor deposition'2006 7,033,514'Method and apparatus for micromachining using a magnetic field and plasma etching'2006 6,950,178'Method and system for monitoring plasma using optical emission spectroscopy'2005 6,936,547'Gas delivery system for deposition processes, and methods of using same'2005 6,908,807'Methods of forming semiconductor constructions'2005 6,866,900'Deposition and chamber treatment methods'2005 6,660,657'Methods of incorporating nitrogen into silicon-oxide-containing layers'2003 6,660,658'Transistor structures, methods of incorporating nitrogen into silicon-oxide-containing layers; and methods of forming transistors'2003 6,627,465'System and method for detecting flow in a mass flow controller'2003 6,606,802'Cleaning efficiency improvement in a high density plasma process chamber using thermally hot gas'2003 6,589,611'Deposition and chamber treatment methods'2003

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2003–2017Patents assigned to MICRON TECHNOLOGY INC (61)· patent assignee history

2003–2017Based in Boise, ID, US· patent location history

2011–2014Patents assigned to RUEGER NEAL R (11)· patent assignee history

2011–2013Patents assigned to SANDHU GURTEJ S (3)· patent assignee history

2012–2014Patents assigned to SANDHU GURTEJ (3)· patent assignee history

2012–2014Patents assigned to KRAMER STEPHEN J (2)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
MICRON TECHNOLOGY INC	61	2003–2017
RUEGER NEAL Rself	11	2011–2014
SANDHU GURTEJ	3	2012–2014
SANDHU GURTEJ S	3	2011–2013
KRAMER STEPHEN J	2	2012–2014

Locations

Location	Patents	Span
Boise, ID, US	61	2003–2017