Inventor
Jing Wan
Inventor
Malta, NY, US
Overview
Patents· 20 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices25%
H01LSemiconductor devices21%
E21BEarth or rock drilling10%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1010%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h108%
G01VGeophysics6%
G06FElectric digital data processing6%
A61KPreparations for medical, dental or toiletry purposes4%
H10BElectronic memory devices4%
B82YSpecific uses or applications of nanostructures2%
PatentTitleYear
10,709,708Method of treating cancer with a combination of MER tyrosine kinase inhibitor and an epidermal growth factor receptor (EGFR) inhibitor202010,082,000Apparatus and method for isolating fluid flow in an open hole completion201810,020,383Preserving the seed layer on STI edge and improving the epitaxial growth20189,640,625'Self-aligned gate contact formation'20179,608,086'Metal gate structure and method of formation'20179,490,340'Methods of forming nanowire devices with doped extension regions and the resulting devices'20169,431,512'Methods of forming nanowire devices with spacers and the resulting devices'20169,390,979'Opposite polarity borderless replacement metal contact scheme'20169,306,019'Integrated circuits with nanowires and methods of manufacturing the same'20169,276,102'Tunnel transistor with high current by bipolar amplification'20169,263,520'Facilitating fabricating gate-all-around nanowire field-effect transistors'20169,147,696'Devices and methods of forming finFETs with self aligned fin formation'20159,129,987'Replacement low-K spacer'20159,085,957'Discretized physics-based models and simulations of subterranean regions, and methods for creating and using the same'20159,043,189'Space-time surrogate models of subterranean regions'20158,634,229'Dynamic memory cell provided with a field-effect transistor having zero swing'20148,581,310'Z2FET field-effect transistor with a vertical subthreshold slope and with no impact ionization'20138,190,414'Modeling of hydrocarbon reservoirs containing subsurface features'20127,983,883'Enriched multi-point flux approximation'20117,884,194'Soluble HER2 and HER3 splice variant proteins, splice-switching oligonucleotides, and their use in the treatment of disease'2011Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2011–2018Patents assigned to EXXONMOBIL UPSTREAM RES CO (4)· patent assignee history
2011–2020Based in Chapel Hill, NC, US· patent location history
2011–2018Based in Houston, TX, US· patent location history
2012–2018Patents assigned to WAN JING (5)· patent assignee history
2012–2015Based in Sugar Land, TX, US· patent location history
2013–2016Patents assigned to CENTRE NAT RECH SCIENT (3)· patent assignee history
2013–2016Patents assigned to COMMISSARIAT ENERGIE ATOMIQUE (3)· patent assignee history
2013–2016Based in Grenoble, FR· patent location history
2015–2018Patents assigned to GLOBALFOUNDRIES INC (10)· patent assignee history
2015–2018Based in Malta, NY, US· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| GLOBALFOUNDRIES INC | 10 | 2015–2018 |
| WAN JINGself | 5 | 2012–2018 |
| EXXONMOBIL UPSTREAM RES CO | 4 | 2011–2018 |
| CENTRE NAT RECH SCIENT | 3 | 2013–2016 |
| COMMISSARIAT ENERGIE ATOMIQUE | 3 | 2013–2016 |
Locations
| Location | Patents | Span |
|---|---|---|
| Malta, New York, US | 10 | 2015–2018 |
| Grenoble, FR | 3 | 2013–2016 |
| Sugar Land, Texas, US | 3 | 2012–2015 |
| Chapel Hill, NC, US | 2 | 2011–2020 |
| Houston, Texas, US | 2 | 2011–2018 |