Inventor
SANGWOOK KIM
Inventor
KR
Overview
Patents· 43 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Lprimary
H01LSemiconductor devices22%
H10DInorganic electric semiconductor devices21%
H10BElectronic memory devices14%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1014%
H10KOrganic electric solid-state devices4%
G06NComputing arrangements based on specific computational models4%
G11CStatic stores4%
G03FPhotomechanical production of textured or patterned surfaces, e.g. for printing, for processing of semiconductor devices3%
G06FElectric digital data processing2%
C23CCoating metallic material2%
PatentTitleYear
12,575,136Transistor202612,571,853Predicting aging of batteries202612,550,377Oxide semiconductor transistor202612,468,218Method of fabricating semiconductor device202512,457,792Thin film structure and electronic device including the same202512,382,644Thin film structure including dielectric material layer and electronic device employing the same202512,369,361Integrated circuit including transistors and a method of manufacturing the same202512,283,629Ferroelectric thin-film structure and electronic device including the same202512,260,505Method and device for providing augmented content through augmented reality view on basis of preset unit space202512,254,041Position recognition method and system based on visual information processing202512,230,711Electronic device and method of manufacturing the same202512,224,346Domain switching devices and methods of manufacturing the same202512,210,290Optical proximity correction method and method of fabricating a semiconductor device using the same202512,205,951Complementary metal oxide semiconductor device202512,191,311Semiconductor device including ferroelectric material, neuromorphic circuit including the semiconductor device, and neuromorphic computing apparatus including the neuromorphic circuit202512,176,413Ferroelectric structure including a ferroelectric film having a first net polarization oriented toward a first polarization enhancement film and semiconductor device including the same202412,170,336Oxide semiconductor transistor, method of manufacturing the same, and memory device including oxide semiconductor transistor202412,100,749Ferroelectric thin-film structures, methods of manufacturing the same, and electronic devices including the ferroelectric thin-film structures202412,094,971Electronic device including ferroelectric layer202412,044,961Method of forming mask including curvilinear shape and method of forming semiconductor device202411,989,646Neuromorphic apparatus having 3D stacked synaptic structure and memory device having the same202411,984,514Semiconductor device202411,978,798Semiconductor device202411,973,142Integrated circuit including transistors and a method of manufacturing the same202411,900,043Electronic device for manufacturing semiconductor device and operating method of electronic device202411,887,989Semiconductor device including ferroelectric material, neuromorphic circuit including the semiconductor device, and neuromorphic computing apparatus including the neuromorphic circuit202411,824,118Electronic device and method of manufacturing the same202311,824,117Oxide semiconductor transistor202311,824,119Domain switching devices and methods of manufacturing the same202311,699,765Semiconductor device202311,677,025Electronic device including ferroelectric layer202311,646,375Ferroelectric thin-film structure and electronic device including the same202311,640,980Field-effect transistor, field-effect transistor array structure and method of manufacturing field-effect transistor202311,604,971Neuromorphic apparatus having 3D stacked synaptic structure and memory device having the same202311,600,712Ferroelectric structure including a ferroelectric film having a net polarization oriented to a polarization enhancement film and semiconductor device including the same202311,556,160Electronic device for adjusting voltage and operating method therefor202311,527,635Ferroelectric thin-film structures, methods of manufacturing the same, and electronic devices including the ferroelectric thin-film structures202211,527,646Domain switching devices and methods of manufacturing the same202211,522,082Electronic device and method of manufacturing the same202211,456,351Thin film structure including dielectric material layer and electronic device employing the same202211,417,763Integrated circuit including transistors and a method of manufacturing the same202211,349,026Electronic device including ferroelectric layer202211,294,290Reticle fabrication method and semiconductor device fabrication method including the same2022Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2022–2026Patents assigned to SAMSUNG ELECTRONICS CO LTD (40)· patent assignee history
2022–2026Based in KR· patent location history
2025Patents assigned to NAVER CORP (2)· patent assignee history
2025Patents assigned to NAVER LABS CORP (1)· patent assignee history
2026Patents assigned to BATTELLE ENERGY ALLIANCE LLC (1)· patent assignee history
2026Based in US· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| SAMSUNG ELECTRONICS CO LTD | 40 | 2022–2026 |
| NAVER CORP | 2 | 2025 |
| BATTELLE ENERGY ALLIANCE LLC | 1 | 2026 |
| NAVER LABS CORP | 1 | 2025 |
Locations
| Location | Patents | Span |
|---|---|---|
| KR | 42 | 2022–2026 |
| US | 1 | 2026 |