Inventor

Munehiro Tada

Inventor

Tokyo, JP

Overview

2005–2021

Patent span

Electricity

Primary field (CPC H)

Patents· 56 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Nprimary

H10NElectric solid-state devices not otherwise provided for20%

H01LSemiconductor devices19%

H10BElectronic memory devices15%

H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1014%

G11CStatic stores9%

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h109%

H10DInorganic electric semiconductor devices4%

H03KPulse technique3%

C23CCoating metallic material2%

G06FElectric digital data processing1%

PatentTitleYear

10,971,547Switch element, switching method and semiconductor device2021 10,957,739Resistance variation element, semiconductor device, and manufacturing method2021 10,923,534Rectifying element and switching element having the rectifying element2021 10,797,105Semiconductor device and method for producing semiconductor device2020 10,693,467Switch circuit, semiconductor device using same, and switching method2020 10,615,339Variable resistance element and method for fabricating the variable resistance element2020 10,490,743Crossbar switch and method of manufacturing the same and semiconductor device2019 10,424,617Crossbar switch with an arrangement of wires, logic integrated circuit using the same, and semiconductor device2019 10,396,798Reconfigurable circuit2019 10,340,451Switching element having overlapped wiring connections and method for fabricating semiconductor switching device2019 10,340,452Variable resistance element, semiconductor device, and manufacturing method of semiconductor device2019 10,312,288Switching element, semiconductor device, and semiconductor device manufacturing method2019 10,305,034Variable resistance element and method for producing variable resistance element2019 10,256,400Semiconductor device and method of manufacturing the same2019 10,249,643Hard copied semiconductor device having a resistance-variable non-volatile element2019 10,103,329Switching element and method for manufacturing switching element2018 9,905,758'Semiconductor device and method for manufacturing same'2018 9,893,276'Switching element, switching element manufacturing method, semiconductor device, and semiconductor device manufacturing method'2018 9,754,998'Semiconductor device and operation method for same'2017 9,548,115'Variable resistance element, semiconductor device having variable resistance element, semiconductor device manufacturing method, and programming method using variable resistance element'2017 9,530,496'Method for programming switching element'2016 9,508,432'Semiconductor device with variable resistance switch and programming method therefor'2016 9,406,877'Semiconductor device and method of manufacturing the same'2016 9,257,390'Semiconductor device with dual damascene wirings'2016 9,245,789'Method for forming wiring'2016 9,231,207'Method for forming resistance changing element capable of operating at low voltage'2016 9,059,402'Resistance-variable element and method for manufacturing the same'2015 9,059,082'Semiconductor device and operation method for same'2015 9,059,028'Semiconductor device and method for manufacturing same'2015 9,029,825'Semiconductor device and manufacturing method for semiconductor device'2015 8,946,672'Resistance changing element capable of operating at low voltage, semiconductor device, and method for forming resistance change element'2015 8,916,466'Method for manufacturing dual damascene wiring in semiconductor device'2014 8,872,542'Semiconductor device and semiconductor device control method'2014 8,816,312'Semiconductor device'2014 8,796,659'Variable resistance element, semiconductor device including variable resistance element, and methods for manufacturing variable resistance element and semiconductor device'2014 8,790,785'Method of forming a porous insulation film'2014 8,766,233'Semiconductor device with variable resistance element and method for manufacturing the same'2014 8,715,791'Method for forming porous insulating film and semiconductor device'2014 8,592,303'Wiring structure and method for manufacturing the same'2013 8,586,958'Switching element and manufacturing method thereof'2013 8,536,629'Semiconductor device and method for manufacturing the same'2013 8,278,763'Semiconductor device'2012 8,198,730'Semiconductor device and method of manufacturing the same'2012 8,188,600'Semiconductor device and method of fabricating the same'2012 8,174,122'Semiconductor device'2012 8,084,294'Method of fabricating organic silicon film, semiconductor device including the same, and method of fabricating the semiconductor device'2011 8,043,957'Semiconductor device, method for manufacturing semiconductor device and apparatus for manufacturing semiconductor'2011 8,004,087'Semiconductor device with dual damascene wirings and method for manufacturing same'2011 7,999,391'Multilayered wiring structure, and method for manufacturing multilayered wiring'2011 7,968,434'Method of forming of a semiconductor film, method of manufacture of a semiconductor device and a semiconductor device'2011 7,923,384'Formation method of porous insulating film, manufacturing apparatus of semiconductor device, manufacturing method of semiconductor device, and semiconductor device'2011 7,867,906'Semiconductor device and method for manufacturing same'2011 7,701,060'Wiring structure and method for manufacturing the same'2010 7,622,808'Semiconductor device and having trench interconnection'2009 7,482,694'Semiconductor device and its manufacturing method'2009 6,972,453'Method of manufacturing a semiconductor device capable of etching a multi-layer of organic films at a high selectivity'2005

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2005–2021Patents assigned to NEC CORP (50)· patent assignee history

2005–2021Based in Tokyo, JP· patent location history

2011–2019Patents assigned to TADA MUNEHIRO (23)· patent assignee history

2011–2014Patents assigned to HAYASHI YOSHIHIRO (9)· patent assignee history

2011–2015Based in Minato-ku, JP· patent location history

2013–2019Patents assigned to HADA HIROMITSU (10)· patent assignee history

2013–2019Patents assigned to SAKAMOTO TOSHITSUGU (9)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
NEC CORP	50	2005–2021
TADA MUNEHIROself	23	2011–2019
HADA HIROMITSU	10	2013–2019
HAYASHI YOSHIHIRO	9	2011–2014
SAKAMOTO TOSHITSUGU	9	2013–2019

Locations

Location	Patents	Span
Tokyo, JP	52	2005–2021
Minato-ku, JP	4	2011–2015