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Inventor

Hitoshi Shiga

Inventor
Yokohama, JP

Overview

57→
Patents
2000–2021
Patent span
Physics
Primary field (CPC G)

Patents· 57 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

G11Cprimary
G11CStatic stores76%
G06FElectric digital data processing14%
H10BElectronic memory devices4%
H10DInorganic electric semiconductor devices3%
H01LSemiconductor devices1%
Y02DClimate change mitigation technologies in information and communication technologies [ict], i.e. information and communication technologies aiming at the reduction of their own energy use1%
PatentTitleYear
10,910,059Nonvolatile semiconductor memory device202110,896,733Semiconductor memory device and method of controlling the same202110,629,268Semiconductor memory device that includes a block decoder having plural transistors and a latch circuit202010,593,405Read process in a semiconductor memory device including a memory cell transistor202010,297,338Memory system20199,613,720'Semiconductor storage device'20179,196,371'Nonvolatile semiconductor memory device and read method thereof'20159,043,679'Memory device'20159,003,105'Semiconductor memory device and method for writing therein'20158,902,662'Memory system having nonvolatile semiconductor memories with control operation having high-current and low-current periods'20148,843,674'Semiconductor memory device capable of testing signal integrity'20148,432,737'Nonvolatile semiconductor memory device and method testing the same'20138,331,158'Semiconductor memory device'20128,331,147'Nonvolatile semiconductor memory device'20128,327,063'Memory system with a semiconductor memory device'20128,205,039'Nonvolatile semiconductor memory device'20128,189,395'Nonvolatile semiconductor memory and data reading method'20128,036,034'Semiconductor storage device equipped with a sense amplifier for reading data and threshold-voltage-information data'20117,978,512'Semiconductor memory system'20117,941,588'Multi-level nonvolatile semiconductor memory device'20117,859,910'Nonvolatile semiconductor memory device'20107,843,724'Nonvolatile semiconductor memory and data reading method'20107,839,678'NAND type flash memory and write method of the same'20107,826,268'Nonvolatile semiconductor memory'20107,800,136'Semiconductor integrated circuit and semiconductor integrated circuit design method'20107,729,178'Non-volatile semiconductor memory device'20107,650,584'Application specific semiconductor integrated circuit and its manufacturing method thereof'20107,619,920'NAND type flash memory and write method of the same'20097,522,452'Non-volatile semiconductor storage device'20097,382,652'NAND flash memory and blank page search method therefor'20087,372,744'Memory system which copies successive pages, and data copy method therefor'20087,369,454'Semiconductor integrated circuit device'20087,327,616'Non-volatile semiconductor memory device'20087,193,896'Multi-value semiconductor memory device and method capable of caching a lower page data upon an incomplete write of an upper page data'20077,161,850'NAND flash memory and blank page search method therefor'20077,161,835'Non-volatile semiconductor memory device'20077,085,160'NAND flash memory and blank page search method therefor'20066,982,904'Non-volatile semiconductor memory device and electric device with the same'20066,963,501'Nonvolatile memory'20056,937,524'Nonvolatile semiconductor memory device having a write control circuit'20056,928,002'Non-volatile semiconductor memory device'20056,903,983'Semiconductor integrated circuit device and read start trigger signal generating method therefor'20056,888,764'Semiconductor device including semiconductor memory'20056,826,068'Fast data readout semiconductor storage apparatus'20046,795,352'Nonvolatile semiconductor memory having page mode with a plurality of banks'20046,778,443'Non-volatile semiconductor memory device having memory blocks pre-programmed before erased'20046,693,818'Semiconductor storage apparatus'20046,671,203'Nonvolatile semiconductor memory having page mode with a plurality of banks'20036,590,813'Semiconductor memory and method of controlling the same'20036,552,936'Semiconductor storage apparatus'20036,434,054'Non-volatile semiconductor memory device controlling the range of distribution of memory cell threshold voltages'20026,434,080'Semiconductor memory and method of controlling the same'20026,351,417'Non-volatile semiconductor memory device having a function for controlling the range of distribution of memory cell threshold voltages and method of erasing data thereof'20026,240,019'Non-volatile semiconductor memory device having a function for controlling the range of distribution of memory cell threshold voltages'20016,226,224'Semiconductor integrated circuit device and storage device'20016,108,246'Semiconductor memory device'20006,041,012'Semiconductor integrated circuit device having a booster circuit and a storage device'2000

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2000–2017Patents assigned to TOSHIBA KK (50)· patent assignee history
2000–2021Based in Yokohama, JP· patent location history
2005–2015Based in Kanagawa, JP· patent location history
2005–2007Based in Matsuyama, JP· patent location history
2006–2008Patents assigned to SOLID STATE SYSTEM CO LTD (4)· patent assignee history
2009–2010Based in Milpitas, CA, US· patent location history
2012–2015Patents assigned to SHIGA HITOSHI (9)· patent assignee history
2012–2015Patents assigned to NAGAO OSAMU (2)· patent assignee history
2014–2020Based in Kawasaki, JP· patent location history
2019–2021Patents assigned to TOSHIBA MEMORY CORP (5)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
TOSHIBA KK502000–2017
SHIGA HITOSHIself92012–2015
TOSHIBA MEMORY CORP52019–2021
SOLID STATE SYSTEM CO LTD42006–2008
NAGAO OSAMU22012–2015
Locations
LocationPatentsSpan
Yokohama, JP422000–2021
Kawasaki, JP72014–2020
Kanagawa, JP32005–2015
Matsuyama, JP32005–2007
Milpitas, California, US22009–2010