LexDanaLexDanabeta
Inventor

Min JIAO

Inventor
TW

Overview

3→
Patents
2025
Patent span
Electricity
Primary field (CPC H)

Patents· 3 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary
H10DInorganic electric semiconductor devices30%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1030%
B82YSpecific uses or applications of nanostructures20%
H01LSemiconductor devices20%
PatentTitleYear
12,406,848Method of fabricating a gate cut feature for multi-gate semiconductor devices202512,324,190Method and multi-channel devices with anti-punch-through features202512,317,578Semiconductor devices with low leakage current and methods of fabricating the same2025

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2025Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (3)· patent assignee history
2025Based in TW· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
TAIWAN SEMICONDUCTOR MFG CO LTD32025
Locations
LocationPatentsSpan
TW32025