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Inventor

Yeou-Ming Lin

Inventor
Jungli, TW

Overview

4→
Patents
2003–2006
Patent span
Electricity
Primary field (CPC H)

Patents· 4 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary
H10DInorganic electric semiconductor devices50%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1038%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests13%
PatentTitleYear
7,071,066'Method and structure for forming high-k gates'20066,764,927'Chemical vapor deposition (CVD) method employing wetting pre-treatment'20046,753,224'Layer of high-k inter-poly dielectric'20046,573,193'Ozone-enhanced oxidation for high-k dielectric semiconductor devices'2003

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2003–2006Patents assigned to TAIWAN SEMICONDUCTOR MFG (4)· patent assignee history
2003Based in Chung-Li, TW· patent location history
2004–2006Based in Jungli, TW· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
TAIWAN SEMICONDUCTOR MFG42003–2006
Locations
LocationPatentsSpan
Jungli, TW32004–2006
Chung-Li, TW12003