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Inventor

Thomas R. Prunty

Inventor
Santa Clara, CA, US

Overview

41→
Patents
2013–2020
Patent span
Electricity
Primary field (CPC H)

Patents· 41 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary
H10DInorganic electric semiconductor devices37%
H01LSemiconductor devices31%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1026%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h106%
PatentTitleYear
10,854,727High power gallium nitride electronics using miscut substrates202010,566,439High power gallium nitride electronics using miscut substrates202010,347,736High power gallium nitride electronics using miscut substrates201910,319,829Method and system for in-situ etch and regrowth in gallium nitride based devices20199,525,039'Method of fabricating a merged P-N junction and schottky diode with regrown gallium nitride layer'20169,472,684'Lateral GaN JFET with vertical drift region'20169,450,112'GaN-based Schottky barrier diode with algan surface layer'20169,368,582'High power gallium nitride electronics using miscut substrates'20169,330,918'Edge termination by ion implantation in gallium nitride'20169,324,844'Method and system for a GaN vertical JFET utilizing a regrown channel'20169,318,331'Method and system for diffusion and implantation in gallium nitride based devices'20169,287,389'Method and system for doping control in gallium nitride based devices'20169,224,828'Method and system for floating guard rings in gallium nitride materials'20159,196,679'Schottky diode with buried layer in GaN materials'20159,184,305'Method and system for a GAN vertical JFET utilizing a regrown gate'20159,171,751'Method and system for fabricating floating guard rings in GaN materials'20159,171,937'Monolithically integrated vertical JFET and Schottky diode'20159,171,923'Method of fabricating a gallium nitride merged P-i-N Schottky (MPS) diode'20159,159,784'Aluminum gallium nitride etch stop layer for gallium nitride based devices'20159,159,799'Method of fabricating a merged P-N junction and schottky diode with regrown gallium nitride layer'20159,136,116'Method and system for formation of P-N junctions in gallium nitride based electronics'20159,123,533'Method and system for in-situ etch and regrowth in gallium nitride based devices'20159,093,284'Aluminum gallium nitride etch stop layer for gallium nitride based devices'20159,093,395'Method and system for local control of defect density in gallium nitride based electronics'20159,059,199'Method and system for a gallium nitride vertical transistor'20158,969,912'Method and system for a GaN vertical JFET utilizing a regrown channel'20158,946,788'Method and system for doping control in gallium nitride based devices'20158,941,117'Monolithically integrated vertical JFET and Schottky diode'20158,933,532'Schottky diode with buried layer in GaN materials'20158,927,999'Edge termination by ion implantation in GaN'20158,853,063'Method and system for carbon doping control in gallium nitride based devices'20148,846,482'Method and system for diffusion and implantation in gallium nitride based devices'20148,836,071'Gallium nitride-based schottky barrier diode with aluminum gallium nitride surface layer'20148,778,788'Method of fabricating a gallium nitride merged P-i-N Schottky (MPS) diode'20148,749,015'Method and system for fabricating floating guard rings in GaN materials'20148,643,134'GaN-based Schottky barrier diode with field plate'20148,592,298'Fabrication of floating guard rings using selective regrowth'20138,592,938'GaN-based Schottky barrier diode with field plate'20138,569,153'Method and system for carbon doping control in gallium nitride based devices'20138,558,242'Vertical GaN-based metal insulator semiconductor FET'20138,502,234'Monolithically integrated vertical JFET and Schottky diode'2013

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2013–2016Patents assigned to AVOGY INC (36)· patent assignee history
2013–2015Patents assigned to NIE HUI (19)· patent assignee history
2013–2015Patents assigned to BROWN RICHARD J (18)· patent assignee history
2013–2015Patents assigned to PRUNTY THOMAS R (18)· patent assignee history
2013–2015Patents assigned to ROMANO LINDA (18)· patent assignee history
2013–2020Based in Santa Clara, CA, US· patent location history
2015–2016Based in Sunnyvale, CA, US· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
AVOGY INC362013–2016
NIE HUI192013–2015
BROWN RICHARD J182013–2015
PRUNTY THOMAS Rself182013–2015
ROMANO LINDA182013–2015
Locations
LocationPatentsSpan
Santa Clara, California, US382013–2020
Sunnyvale, California, US32015–2016