Inventor
Thomas P. Pearsall
Inventor
Paris, FR
Overview
Patents· 12 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Fprimary
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation27%
B82YSpecific uses or applications of nanostructures19%
H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light12%
G02BOptical elements, systems or apparatus8%
H10DInorganic electric semiconductor devices8%
Y02EReduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution8%
H01PWaveguides4%
H02MApparatus for conversion between ac and ac, between ac and dc, or between dc and dc, and for use with mains or similar power supply systems4%
H10HInorganic light-emitting semiconductor devices having potential barriers4%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h104%
PatentTitleYear
7,170,142'Planar integrated circuit including a plasmon waveguide-fed Schottky barrier detector and transistors connected therewith'20077,151,881'Impurity-based waveguide detectors'20066,342,720'Voltage-controlled wavelength-selective photodetector'20024,772,924'Device having strain induced region of altered bandgap'19884,754,384'Triggerable superconductive switching means, and apparatus comprising the means'19884,725,870'Silicon germanium photodetector'19884,599,728'Multi-quantum well laser emitting at 1.5 .mu.m'19864,382,265'Heterojunction semiconductor device'19834,231,049'Heterojunction photodiode of the avalanche type'19804,228,453'(III) Plane gallium arsenide IMPATT diode'19804,186,407'Heterojunction avalanche diode with a ternary alloy of gallium, indium and arsenic, and a binary alloy of indium and phosphorus'19803,995,303'Growth and operation of a step-graded ternary III-V heterojunction p-n diode photodetector'1976Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1976Based in Navesink, NJ, US· patent location history
1980–1983Patents assigned to THOMSON CSF (4)· patent assignee history
1980–2007Based in Paris, FR· patent location history
1986Patents assigned to AT & T BELL LAB (1)· patent assignee history
1986–1988Based in Summit, NJ, US· patent location history
1988Patents assigned to AMERICAN TELEPHONE & TELEGRAPH (2)· patent assignee history
1988Patents assigned to BEAN JOHN C (1)· patent assignee history
2002Based in Mercer Island, WA, US· patent location history
2006–2007Patents assigned to APPLIED MATERIALS INC (2)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| THOMSON CSF | 4 | 1980–1983 |
| AMERICAN TELEPHONE & TELEGRAPH | 2 | 1988 |
| APPLIED MATERIALS INC | 2 | 2006–2007 |
| AT & T BELL LAB | 1 | 1986 |
| BEAN JOHN C | 1 | 1988 |
Locations
| Location | Patents | Span |
|---|---|---|
| Paris, FR | 6 | 1980–2007 |
| Summit, New Jersey, US | 4 | 1986–1988 |
| Mercer Island, Washington, US | 1 | 2002 |
| Navesink, New Jersey, US | 1 | 1976 |