Inventor

Jeong-Uk Han

Inventor

Suwon-si, KR

Overview

2001–2021

Patent span

Electricity

Primary field (CPC H)

Patents· 56 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Bprimary

H10BElectronic memory devices33%

H10DInorganic electric semiconductor devices33%

G11CStatic stores12%

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h105%

H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h105%

C08GMacromolecular compounds obtained otherwise than by reactions only involving unsaturated carbon-to-carbon bonds2%

C08LCompositions of macromolecular compounds2%

H01MProcesses or means, e.g. batteries, for the direct conversion of chemical energy into electrical energy2%

Y02EReduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution2%

B01DSeparation1%

PatentTitleYear

10,947,338Block polymer and polymer electrolyte membrane comprising same2021 10,941,249Method of preparing polyphenylene sulfide and high-viscosity polyphenylene sulfide prepared using the same2021 10,899,874Block polymer and polymer electrolyte membrane including same2021 8,604,535'Non-volatile memory device and method of manufacturing the same'2013 8,404,542'Semiconductor device having transistor with vertical gate electrode and method of fabricating the same'2013 8,362,545'Nonvolatile memory device and method of manufacturing the same'2013 8,318,583'Method of forming isolation structure of semiconductor device'2012 8,097,913'Electrically erasable and programmable read only memory device comprising common source region and method of manufacturing same'2012 8,059,473'Non-volatile memory device'2011 8,053,342'Mask ROM device, semiconductor device including the mask ROM device, and methods of fabricating mask ROM device and semiconductor device'2011 7,973,314'Semiconductor device and method of manufacturing the same'2011 7,944,753'Electrically erasable programmable read-only memory (EEPROM) cell and methods for forming and reading the same'2011 7,936,003'Semiconductor device having transistor with vertical gate electrode and method of fabricating the same'2011 7,932,149'Method of manufacturing a semiconductor device'2011 7,928,492'Non-volatile memory integrated circuit device and method of fabricating the same'2011 7,855,410'Semiconductor memory devices having a floating gate with a projecting portion and methods of forming semiconductor memory devices having a floating gate with a projecting portion'2010 7,839,680'Electrically erasable programmable read-only memory (EEPROM) cell and methods for forming and reading the same'2010 7,820,516'Methods of manufacturing non-volatile memory devices having a vertical channel'2010 7,800,158'Semiconductor device and method of forming the same'2010 7,791,951'Methods of operating non-volatile memory device'2010 7,777,256'Mask ROM device, semiconductor device including the mask ROM device, and methods of fabricating mask ROM device and semiconductor device'2010 7,733,696'Non-volatile memory devices including local control gates on multiple isolated well regions and related methods and systems'2010 7,696,561'Non-volatile memory device, method of manufacturing the same and method of operating the same'2010 7,642,593'Nonvolatile memory device and method of fabricating the same'2010 7,638,387'Mask ROM and method of fabricating the same'2009 7,602,004'Semiconductor device and methods for forming the same'2009 7,602,008'Split gate non-volatile memory devices and methods of forming the same'2009 7,598,139'Single chip data processing device with embedded nonvolatile memory and method thereof'2009 7,586,146'Non-volatile memory and method of fabricating same'2009 7,553,725'Nonvolatile memory devices and methods of fabricating the same'2009 7,534,688'Nonvolatile memory device with a non-planar gate-insulating layer and method of fabricating the same'2009 7,531,410'Semiconductor flash memory device and method of fabricating the same'2009 7,515,468'Nonvolatile memory device'2009 7,514,739'Nonvolatile semiconductor device and method of fabricating the same'2009 7,512,003'Non-volatile memory device'2009 7,511,334'Twin-ONO-type SONOS memory'2009 7,495,281'Non-volatile memory device and methods of forming and operating the same'2009 7,492,002'Non-volatile memory device with a select gate electrode and a control gate electrode formed on a floating gate'2009 7,429,766'Split gate type nonvolatile memory device'2008 7,411,243'Nonvolatile semiconductor device and method of fabricating the same'2008 7,351,636'Methods of forming split-gate non-volatile memory cells including raised oxide layers on field oxide regions'2008 7,323,740'Single chip data processing device with embedded nonvolatile memory and method thereof'2008 7,320,913'Methods of forming split-gate non-volatile memory devices'2008 7,315,057'Split gate non-volatile memory devices and methods of forming same'2008 7,285,820'Flash memory device using semiconductor fin and method thereof'2007 7,271,061'Method of fabricating non-volatile memory'2007 7,190,024'Method of manufacturing a thin dielectric layer using a heat treatment and a semiconductor device formed using the method'2007 7,183,157'Nonvolatile memory devices'2007 7,041,557'Method of manufacturing a thin dielectric layer using a heat treatment and a semiconductor device formed using the method'2006 7,038,270'Nonvolatile memory device with a non-planar gate-insulating layer and method of fabricating the same'2006 7,005,349'Method of manufacturing twin-ONO-type SONOS memory using reverse self-alignment process'2006 6,914,290'Split-gate type nonvolatile memory devices'2005 6,794,711'Non-volatile memory device having select transistor structure and SONOS cell structure and method for fabricating the device'2004 6,770,920'Nonvolatile memory devices'2004 6,323,517'Non-volatile memory device with single-layered overwriting transistor'2001 6,197,636'Electrically erasable programmable read-only memory device and method for fabricating the same'2001

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2001–2013Patents assigned to SAMSUNG ELECTRONICS CO LTD (53)· patent assignee history

2001–2013Based in Suwon-si, KR· patent location history

2004–2011Based in Gyeonggi-do, KR· patent location history

2006–2010Based in Kyungki-do, KR· patent location history

2011–2013Patents assigned to HAN JEONG-UK (6)· patent assignee history

2011–2013Patents assigned to KIM YONG-TAE (5)· patent assignee history

2012Patents assigned to PARK WEON-HO (2)· patent assignee history

2013Based in Hwaseong-si, KR· patent location history

2021Patents assigned to LG CHEMICAL LTD (3)· patent assignee history

2021Based in Daejeon, KR· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
SAMSUNG ELECTRONICS CO LTD	53	2001–2013
HAN JEONG-UKself	6	2011–2013
KIM YONG-TAE	5	2011–2013
LG CHEMICAL LTD	3	2021
PARK WEON-HO	2	2012

Locations

Location	Patents	Span
Suwon-si, KR	41	2001–2013
Gyeonggi-do, KR	8	2004–2011
Daejeon, KR	3	2021
Kyungki-do, KR	3	2006–2010
Hwaseong-si, KR	1	2013