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Inventor

Florin Udrea

Inventor
Cambridge, GB

Overview

83→
Patents
1996–2021
Patent span
Electricity
Primary field (CPC H)

Patents· 83 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary
H10DInorganic electric semiconductor devices35%
H01LSemiconductor devices14%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h108%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h108%
G01NInvestigating or analysing materials by determining their chemical or physical properties6%
H05BElectric heating4%
G01JMeasurement of intensity, velocity, spectral content, polarisation, phase or pulse characteristics of infrared, visible or ultraviolet light4%
H10NElectric solid-state devices not otherwise provided for3%
G01FMeasuring volume, volume flow, mass flow or liquid level3%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation2%
PatentTitleYear
11,081,578III-V depletion mode semiconductor device202111,073,415Thermal fluid flow sensor having a dielectric membrane comprising discontinuities between the heating element and an edge202111,067,422Thermal fluid flow sensor202111,035,709CMOS thermal fluid flow sensing device employing a flow sensor and a pressure sensor on a single membrane202110,964,806Gallium nitride transistor202110,883,804Infra-red device202110,818,786III-V semiconductor device with integrated protection functions202010,636,777Infra-red device202010,593,826Infra-red devices202010,551,246IR detector array device202010,527,571CMOS-based semiconductor device on micro-hotplate and method of fabrication202010,488,358Micro-hotplate devices with ring structures201910,483,356Power semiconductor device with optimized field-plate design201910,436,646IR detector arrays201910,408,802Thermal conductivity sensing device, methods for operation and uses of the same201910,288,575Environment sensor system201910,164,078Bipolar semiconductor device with multi-trench enhancement regions201810,157,979High voltage semiconductor device with reduced peak electric field in active and termination areas of the device201810,128,302IR detector array device201810,115,812Semiconductor device having a superjunction structure20189,871,128'Bipolar semiconductor device with sub-cathode enhancement regions'20189,859,360'Edge termination for semiconductor devices and corresponding fabrication method'20189,831,330Bipolar semiconductor device having a deep charge-balanced structure20179,799,725'IGBT having a deep superjunction structure'20179,768,284'Bipolar semiconductor device having a charge-balanced inter-trench structure'20179,685,506'IGBT having an inter-trench superjunction structure'20179,543,305'Reverse conducting power semiconductor device'20179,214,604'Plasmonic IR devices'20159,080,907'Shear stress sensors'20158,970,016'Semiconductor device'20158,928,065'Trench DMOS device with improved termination structure for high voltage applications'20158,866,252'Power semiconductor devices and fabrication methods'20148,859,303'IR emitter and NDIR sensor'20148,853,770'Trench MOS device with improved termination structure for high voltage applications'20148,816,468'Schottky rectifier'20148,716,794'SOI lateral MOSFET devices'20148,564,097'Reverse conducting IGBT'20138,531,857'Power supply device and method for driving the same'20138,482,031'Lateral insulated gate bipolar transistors (LIGBTS)'20138,432,030'Power electronic package having two substrates with multiple semiconductor chips and electronic components'20138,415,712'Lateral insulated gate bipolar transistor (LIGBT)'20138,410,560'Electromigration reduction in micro-hotplates'20138,304,316'Semiconductor device and method of forming a semiconductor device'20128,174,069'Power semiconductor device and a method of forming a power semiconductor device'20128,053,783'Switching device'20117,999,369'Power electronic package having two substrates with multiple semiconductor chips and electronic components'20117,994,569'Semiconductor device and method for forming the same'20117,968,940'Insulated gate bipolar transistor device comprising a depletion-mode MOSFET'20117,849,727'Gas-sensing semiconductor devices'20107,821,013'Silicon carbide semiconductor device'20107,714,407'Semiconductor device and method of forming a semiconductor device'20107,691,694'Silicon carbide semiconductor device having junction field effect transistor and method for manufacturing the same'20107,679,160'Semiconductor device and method of forming a semiconductor device'20107,605,446'Bipolar high voltage/power semiconductor device having first and second insulated gated and method of operation'20097,589,379'Power semiconductor and method of fabrication'20097,531,875'Lateral SOI semiconductor device'20097,531,993'Half bridge circuit and method of operating a half bridge circuit'20097,495,300'Gas-sensing semiconductor devices'20097,485,509'Semiconductor device provided by silicon carbide substrate and method for manufacturing the same'20097,465,964'Semiconductor device in which an injector region is isolated from a substrate'20087,411,272'Semiconductor device and method of forming a semiconductor device'20087,381,606'Semiconductor device and method of forming a semiconductor device'20087,355,226'Power semiconductor and method of fabrication'20087,301,220'Semiconductor device and method of forming a semiconductor device'20077,235,439'Method of forming a MOS-controllable power semiconductor device for use in an integrated circuit'20077,230,314'Semiconductor device and method of forming a semiconductor device'20077,230,275'Silicon carbide semiconductor device having junction field effect transistor and method for manufacturing the same'20077,164,154'Gate wiring layout for silicon-carbide-based junction field effect transistor'20077,154,130'Semiconductor device provided by silicon carbide substrate and method for manufacturing the same'20067,005,678'Silicon carbide semiconductor device having junction field effect transistor and method for manufacturing the same'20066,927,102'Semiconductor device and method of forming a semiconductor device'20056,900,518'Semiconductor device'20056,858,884'Lateral semiconductor device'20056,703,684'Semiconductor device and method of forming a semiconductor device'20046,693,340'Lateral semiconductor device'20046,566,240'Semiconductor device and method of forming a semiconductor device'20036,445,054'Semiconductor device'20026,426,520'Semiconductor device'20026,259,134'Trench thyristor with improved breakdown voltage characteristics'20016,111,280'Gas-sensing semiconductor devices'20006,111,289'Semiconductor device'20006,091,107'Semiconductor devices'20005,489,787'Semiconductor device having an insulated gate field effect transistor and exhibiting thyristor action'1996

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1996–2021Based in Cambridge, GB· patent location history
2003–2014Patents assigned to CAMBRIDGE SEMICONDUCTOR LTD (23)· patent assignee history
2006–2013Patents assigned to DENSO CORP (9)· patent assignee history
2012–2015Patents assigned to UDREA FLORIN (16)· patent assignee history
2014–2015Based in Cambridgeshire, GB· patent location history
2017–2018Patents assigned to INFINEON TECHNOLOGIES AMERICAS CORP (7)· patent assignee history
2018–2021Patents assigned to AMS SENSORS UK LTD (8)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
CAMBRIDGE SEMICONDUCTOR LTD232003–2014
UDREA FLORINself162012–2015
DENSO CORP92006–2013
AMS SENSORS UK LTD82018–2021
INFINEON TECHNOLOGIES AMERICAS CORP72017–2018
Locations
LocationPatentsSpan
Cambridge, GB811996–2021
Cambridgeshire, GB22014–2015