Inventor
GI GWAN PARK
Inventor
KR
Overview
Patents· 12 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices43%
H01LSemiconductor devices29%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1014%
H10BElectronic memory devices11%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h104%
PatentTitleYear
12,563,769Semiconductor device with a fin-shaped active region and an gate electrode202612,563,799Multi-pattern semiconductor device and method for fabricating same202612,414,364Semiconductor device202512,225,741Semiconductor device including source/drain having sidewalls with convex and concave portions202512,211,846Semiconductor device202512,015,086Semiconductor device with a fin-shaped active region and a gate electrode202411,956,937Semiconductor device having fin-type pattern with varying widths along a center vertical line thereof202411,908,858Semiconductor device202411,728,345Multi-gate metal-oxide-semiconductor field effect transistor202311,521,900Semiconductor device and method of fabricating the same202211,367,620Method of fabricating semiconductor device202211,355,492Semiconductor device with chamfered upper portions of work function layer2022Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2022–2026Patents assigned to SAMSUNG ELECTRONICS CO LTD (12)· patent assignee history
2022–2026Based in KR· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| SAMSUNG ELECTRONICS CO LTD | 12 | 2022–2026 |
Locations
| Location | Patents | Span |
|---|---|---|
| KR | 12 | 2022–2026 |