Inventor
Chuan-Cheng Tu
Inventor
Taipei, TW
Overview
Patents· 21 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Hprimary
H10HInorganic light-emitting semiconductor devices having potential barriers54%
H01LSemiconductor devices14%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1014%
B82YSpecific uses or applications of nanostructures6%
H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light6%
H10DInorganic electric semiconductor devices3%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h103%
PatentTitleYear
9,018,655'Light emitting apparatus and manufacture method thereof'20158,969,907'Flip-chip light emitting diode'20158,823,043'Flip-chip light emitting diode'20148,816,386'Light emitting device and manufacture method thereof'20148,791,475'Light-emitting diode'2014RE043411'Series connection of two light emitting diodes through semiconductor manufacture process'20128,101,959'Light emitting device'20127,923,841'Method for bonding semiconductor structure with substrate and high efficiency photonic device manufactured by using the same method'20117,816,695'Light emitting device and method of forming the same'20107,745,833'Semiconductor light emitting device and fabrication method of the same'20107,704,760'Method of making light emitting diode with irregular surface and independent valleys'20107,488,988'Light emitting device and method of forming the same'20097,435,604'Method of making light emitting diode'20087,391,061'Light emitting diode with thermal spreading layer'20087,192,797'Light emitting device and manufacture method thereof'20077,154,149'EDS protection configuration and method for light emitting diodes'20067,141,830'Semiconductor light emitting device and method of making the same'20066,995,403'Light emitting device'20066,720,571'Quantum well device with ESD endurance and method of forming the same'20046,570,191'Surface-light-emitting device including AlGalnP and AlGaAs multi-film reflecting layers'20036,066,862'High brightness light emitting diode'2000Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2000–2006Patents assigned to UNITED EPITAXY CO LTD (4)· patent assignee history
2000–2015Based in Tainan, TW· patent location history
2006–2015Patents assigned to EPISTAR CORP (13)· patent assignee history
2006–2015Based in Taipei, TW· patent location history
2007–2012Based in Hsinchu, TW· patent location history
2011–2015Patents assigned to RGB CONSULTING CO LTD (4)· patent assignee history
2012–2014Patents assigned to TU CHUAN-CHENG (3)· patent assignee history
2012Patents assigned to LIN JIN-YWAN (2)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| EPISTAR CORP | 13 | 2006–2015 |
| RGB CONSULTING CO LTD | 4 | 2011–2015 |
| UNITED EPITAXY CO LTD | 4 | 2000–2006 |
| TU CHUAN-CHENGself | 3 | 2012–2014 |
| LIN JIN-YWAN | 2 | 2012 |
Locations
| Location | Patents | Span |
|---|---|---|
| Taipei, TW | 14 | 2006–2015 |
| Tainan, TW | 5 | 2000–2015 |
| Hsinchu, TW | 2 | 2007–2012 |