Inventor
WEI-YEN WOON
Inventor
TW
Overview
Patents· 17 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices31%
H01LSemiconductor devices27%
B82YSpecific uses or applications of nanostructures16%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1016%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h108%
C07FAcyclic, carbocyclic or heterocyclic compounds containing elements other than carbon, hydrogen, halogen, oxygen, nitrogen, sulfur, selenium or tellurium2%
PatentTitleYear
12,593,681Semiconductor device including dielectrics made of porous organic frameworks, and method of fabricating the same202612,527,072Self-aligned patterning layer for metal gate formation202612,520,562Semiconductor device with germanium-based channel202612,501,670Isolation structure for semiconductor device202512,484,253Metal features of a semiconductor device and methods for forming the same202512,444,680Interconnect structures with conductive carbon layers202512,363,992Semiconductor device and manufacturing method thereof202512,336,235Semiconductor device having isolation structure formed of low-k dielectric material and method for forming the same202512,315,863Contact structures in semiconductor devices202512,243,915Graphene wrap-around contact202512,218,225Radical treatment in supercritical fluid for gate dielectric quality improvement to CFET structure202512,166,0792D channel transistors with low contact resistance202412,142,649Semiconductor structure with conductive carbon layer and method for manufacturing the same202412,136,570Graphene layer for low resistance contacts and damascene interconnects202412,136,660Semiconductor device, and method for protecting low-k dielectric feature of semiconductor device202412,131,954Selective epitaxy process for the formation of CFET local interconnection202412,062,576Semiconductor devices with a rare earth metal oxide layer2024Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2024–2026Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (17)· patent assignee history
2024–2026Based in TW· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TAIWAN SEMICONDUCTOR MFG CO LTD | 17 | 2024–2026 |
Locations
| Location | Patents | Span |
|---|---|---|
| TW | 17 | 2024–2026 |