Inventor
Michael A. Walker
Inventor
Boise, ID, US
Overview
Patents· 80 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
B24Bprimary
B24BMachines, devices, or processes for grinding or polishing24%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1014%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests12%
H10BElectronic memory devices11%
H10DInorganic electric semiconductor devices8%
B24DTools for grinding, buffing or sharpening6%
B08BCleaning in general6%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h104%
C11DDetergent compositions3%
C09KMaterials for miscellaneous applications, not provided for elsewhere2%
PatentTitleYear
10,822,682Method to prevent abnormal grain growth for beta annealed Ti--6AL--4V forgings202010,094,013Method to prevent abnormal grain growth for beta annealed TI-6AL-4V forgings20188,209,874'Building frame construction tools and methods using laser alignment'20127,825,450'Sacrificial self-aligned interconnect structures'20107,427,793'Sacrificial self-aligned interconnect structure'20087,329,917'Permeable capacitor electrode'2008RE039665'Optimized container stacked capacitor DRAM cell utilizing sacrificial oxide deposition and chemical mechanical polishing'20077,179,706'Permeable capacitor electrode'20076,995,072'Method of making sacrificial self-aligned interconnection structure'20066,818,501'Method of making a self-aligned recessed container cell capacitor'20046,803,316'Method of planarizing by removing all or part of an oxidizable material layer from a semiconductor substrate'20046,784,069'Permeable capacitor electrode'20046,672,951'Fixed abrasive polishing pad'20046,635,574'Method of removing material from a semiconductor substrate'20036,558,234'Method and apparatus for supporting a polishing pad during chemical-mechanical planarization of microelectronic substrates'20036,540,593'Fixed abrasive polishing pad'2003RE038049'Optimized container stacked capacitor dram cell utilizing sacrificial oxide deposition and chemical mechanical polishing'20036,527,626'Fixed abrasive polishing pad'20036,521,534'Treatment of exposed silicon and silicon dioxide surfaces'20036,517,425'Fixed abrasive polishing pad'20036,476,435'Self-aligned recessed container cell capacitor'20026,468,951'Cleaning composition containing tetraalkylammonium salt and use thereof in semiconductor fabrication'20026,439,970'Method and apparatus for releasably attaching polishing pads to planarizing machines in mechanical and/or chemical-mechanical planarization of microelectronic-device substrate assemblies'20026,431,960'Fixed abrasive polishing pad'20026,428,404'Web-format planarizing machines and methods for planarizing microelectronic substrate assemblies'20026,425,815'Fixed abrasive polishing pad'20026,419,560'Web-format planarizing machines and methods for planarizing microelectronic substrate assemblies'20026,419,568'Fixed abrasive polishing pad'20026,416,616'Apparatus for releasably attaching polishing pads to planarizing machines in mechanical and/or chemical-mechanical planarization of microelectronic-device substrate assemblies'20026,409,581'Belt polishing pad method'20026,409,586'Fixed abrasive polishing pad'20026,402,601'Web-format planarizing machines and methods for planarizing microelectronic substrate assemblies'20026,386,951'Methods of polishing materials, methods of slowing a rate of material removal of a polishing process, and methods of forming trench isolation regions'20026,364,749'CMP polishing pad with hydrophilic surfaces for enhanced wetting'20026,361,417'Method and apparatus for supporting a polishing pad during chemical-mechanical planarization of microelectronic substrates'20026,331,139'Method and apparatus for supporting a polishing pad during chemical-mechanical planarization of microelectronic substrates'20016,306,014'Web-format planarizing machines and methods for planarizing microelectronic substrate assemblies'20016,296,557'Method and apparatus for releasably attaching polishing pads to planarizing machines in mechanical and/or chemical-mechanical planarization of microelectronic-device substrate assemblies'20016,290,579'Fixed abrasive polishing pad'20016,277,015'Polishing pad and system'20016,273,100'Surface cleaning apparatus and method'20016,273,800'Method and apparatus for supporting a polishing pad during chemical-mechanical planarization of microelectronic substrates'20016,269,511'Surface cleaning apparatus'20016,261,922'Methods of forming trench isolation regions'20016,261,163'Web-format planarizing machines and methods for planarizing microelectronic substrate assemblies'20016,258,660'Method of making a self-aligned recessed container cell capacitor'20016,254,460'Fixed abrasive polishing pad'20016,224,466'Methods of polishing materials, methods of slowing a rate of material removal of a polishing process'20016,206,769'Method and apparatus for stopping mechanical and chemical mechanical planarization of substrates at desired endpoints'20016,200,901'Polishing polymer surfaces on non-porous CMP pads'20016,180,450'Semiconductor processing methods of forming stacked capacitors'20016,168,986'Method of making a sacrificial self-aligned interconnect structure'20016,136,043'Polishing pad methods of manufacture and use'20006,103,627'Treatment of a surface having an exposed silicon/silica interface'20006,096,650'Treatment of a surface having exposed silica'20006,090,475'Polishing pad, methods of manufacturing and use'20006,044,851'Cleaning composition containing tetraalkylammonium salt and use thereof in semiconductor fabrication'20006,037,218'Semiconductor processing methods of forming stacked capacitors'20005,990,012'Chemical-mechanical polishing of hydrophobic materials by use of incorporated-particle polishing pads'19995,981,396'Method for chemical-mechanical planarization of stop-on-feature semiconductor wafers'19995,963,814'Method of forming recessed container cells by wet etching conductive layer and dissimilar layer formed over conductive layer'19995,942,131'Treatment of a surface having an expose silicon/silica interface'19995,919,082'Fixed abrasive polishing pad'19995,893,754'Method for chemical-mechanical planarization of stop-on-feature semiconductor wafers'19995,855,804'Method and apparatus for stopping mechanical and chemical-mechanical planarization of substrates at desired endpoints'19995,855,811'Cleaning composition containing tetraalkylammonium salt and use thereof in semiconductor fabrication'19995,779,522'Directional spray pad scrubber'19985,773,464'C-10 epoxy taxanes'19985,733,176'Polishing pad and method of use'19985,690,540'Spiral grooved polishing pad for chemical-mechanical planarization of semiconductor wafers'19975,686,038'Resin transfer molding of composite materials that emit volatiles during processing'19975,652,164'Semiconductor processing methods of forming stacked capacitors'19975,649,262'Film cleaning apparatus and method'19975,645,737'Wet clean for a surface having an exposed silicon/silica interface'19975,616,069'Directional spray pad scrubber'19975,518,948'Method of making cup-shaped DRAM capacitor having an inwardly overhanging lip'19965,498,562'Semiconductor processing methods of forming stacked capacitors'19965,486,684'Multipass induction heating for thermoplastic welding'19965,270,241'Optimized container stacked capacitor DRAM cell utilizing sacrificial oxide deposition and chemical mechanical polishing'19935,162,248'Optimized container stacked capacitor DRAM cell utilizing sacrificial oxide deposition and chemical mechanical polishing'1992Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1992–2010Patents assigned to MICRON TECHNOLOGY INC (72)· patent assignee history
1992–2010Based in Boise, ID, US· patent location history
1996–1997Patents assigned to BOEING CO (2)· patent assignee history
1996–1997Based in Sumner, WA, US· patent location history
1998Patents assigned to BRISTOL MYERS SQUIBB CO (1)· patent assignee history
1998Based in Durham, CT, US· patent location history
2001Patents assigned to MICRON TECHNOLOGIES INC (1)· patent assignee history
2001–2012Based in Kuna, ID, US· patent location history
2018–2020Patents assigned to SPIRIT AEROSYS INC (2)· patent assignee history
2018–2020Based in Wichita, KS, US· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| MICRON TECHNOLOGY INC | 72 | 1992–2010 |
| BOEING CO | 2 | 1996–1997 |
| SPIRIT AEROSYS INC | 2 | 2018–2020 |
| BRISTOL MYERS SQUIBB CO | 1 | 1998 |
| MICRON TECHNOLOGIES INC | 1 | 2001 |
Locations
| Location | Patents | Span |
|---|---|---|
| Boise, ID, US | 66 | 1992–2010 |
| Kuna, ID, US | 8 | 2001–2012 |
| Wichita, KS, US | 2 | 2018–2020 |
| Sumner, Washington, US | 2 | 1996–1997 |
| Durham, CT, US | 1 | 1998 |