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Inventor

Yinghua Piao

Inventor
Shanghai, CN

Overview

2→
Patents
2014–2015
Patent span
Electricity
Primary field (CPC H)

Patents· 2 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary
H10DInorganic electric semiconductor devices50%
H01LSemiconductor devices25%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1025%
PatentTitleYear
8,969,160'Asymmetric source-drain field-effect transistor having a mixed schottky/P-N junction and method of making'20158,697,529'Schottky junction source/drain transistor and method of making'2014

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2014–2015Patents assigned to PIAO YINGHUA (2)· patent assignee history
2014–2015Patents assigned to UNIV FUDAN (2)· patent assignee history
2014–2015Patents assigned to WU DONGPING (2)· patent assignee history
2014–2015Patents assigned to ZHANG SHILI (2)· patent assignee history
2014Patents assigned to LUO JUN (1)· patent assignee history
2014–2015Based in Shanghai, CN· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
PIAO YINGHUAself22014–2015
UNIV FUDAN22014–2015
WU DONGPING22014–2015
ZHANG SHILI22014–2015
LUO JUN12014
Locations
LocationPatentsSpan
Shanghai, CN22014–2015