Inventor
Sonoko Abe
Inventor
Higashimurayama, JP
Overview
Patents· 6 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
G11Cprimary
G11CStatic stores33%
H10DInorganic electric semiconductor devices33%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1033%
PatentTitleYear
6,503,803'Method of fabricating a semiconductor integrated circuit device for connecting semiconductor region and electrical wiring metal via titanium silicide layer'20036,480,418'Semiconductor non-volatile storage'20026,307,780'Semiconductor non-volatile storage'20016,268,658'Semiconductor integrated circuit device for connecting semiconductor region and electrical wiring metal via titanium silicide layer and method of fabrication thereof'20016,122,196'Semiconductor non-volatile storage device capable of a high speed reading operation'20006,031,288'Semiconductor integrated circuit device for connecting semiconductor region and electrical wiring metal via titanium silicide layer and method of fabrication thereof'2000Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2000–2003Patents assigned to HITACHI LTD (6)· patent assignee history
2000Patents assigned to HITACHI ULSI SYS CO LTD (1)· patent assignee history
2000–2003Based in Higashimurayama, JP· patent location history
2000–2002Based in Higashiyamato, JP· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| HITACHI LTD | 6 | 2000–2003 |
| HITACHI ULSI SYS CO LTD | 1 | 2000 |
Locations
| Location | Patents | Span |
|---|---|---|
| Higashimurayama, JP | 3 | 2000–2003 |
| Higashiyamato, JP | 3 | 2000–2002 |