Inventor
Milind Kulkarni
Inventor
St. Louis, MO, US
Overview
Patents· 15 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
C30Bprimary
C30BSingle-crystal growth26%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1022%
Y10TTechnical subjects covered by former us classification19%
B01JChemical or physical processes, e.g. catalysis or colloid chemistry11%
C01BNon-metallic elements11%
B28DWorking stone or stone-like materials4%
H04LTransmission of digital information, e.g. telegraphic communication4%
Y02PClimate change mitigation technologies in the production or processing of goods4%
PatentTitleYear
11,088,948Correlating network flows in a routing service for full-proxy network appliances20218,906,313'Fluidized bed reactor systems'20148,728,574'Methods for introducing a first gas and a second gas into a reaction chamber'20148,673,248'Silicon material with controlled agglomerated point defects and oxygen clusters induced by the lateral surface'20148,551,247'Generating a pumping force in a silicon melt by applying a time-varying magnetic field'20138,404,206'Methods for producing polycrystalline silicon that reduce the deposition of silicon on reactor walls'20138,398,765'Controlling a melt-solid interface shape of a growing silicon crystal using an unbalanced magnetic field and iso-rotation'20138,216,362'Controlling agglomerated point defect and oxygen cluster formation induced by the lateral surface of a silicon single crystal during CZ growth'20128,147,613'Crystal puller and method for growing a monocrystalline ingot'20127,878,883'Wire saw ingot slicing system and method with ingot preheating, web preheating, slurry temperature control and/or slurry flow rate control'20117,201,800'Process for making silicon wafers with stabilized oxygen precipitate nucleation centers'20077,132,091'Single crystal silicon ingot having a high arsenic concentration'20066,808,781'Silicon wafers with stabilized oxygen precipitate nucleation centers and process for making the same'20046,312,517'Multi-stage arsenic doping process to achieve low resistivity in silicon crystal grown by czochralski method'20016,294,469'Silicon wafering process flow'2001Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2001–2014Patents assigned to MEMC ELECTRONIC MATERIALS (11)· patent assignee history
2001–2014Based in St. Louis, MO, US· patent location history
2012–2014Patents assigned to KULKARNI MILIND S (5)· patent assignee history
2013–2014Patents assigned to DEVULAPALLI BALAJI (3)· patent assignee history
2013–2014Patents assigned to FOLI KWASI (3)· patent assignee history
2013–2014Patents assigned to GUPTA PUNEET (3)· patent assignee history
2021Based in Sammamish, WA, US· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| MEMC ELECTRONIC MATERIALS | 11 | 2001–2014 |
| KULKARNI MILIND Sself | 5 | 2012–2014 |
| DEVULAPALLI BALAJI | 3 | 2013–2014 |
| FOLI KWASI | 3 | 2013–2014 |
| GUPTA PUNEET | 3 | 2013–2014 |
Locations
| Location | Patents | Span |
|---|---|---|
| St. Louis, MO, US | 14 | 2001–2014 |
| Sammamish, Washington, US | 1 | 2021 |