Inventor

GUAN-LIN CHEN

Inventor

TW

Overview

2021–2026

Patent span

Electricity

Primary field (CPC H)

Patents· 71 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary

H10DInorganic electric semiconductor devices30%

H01LSemiconductor devices26%

B82YSpecific uses or applications of nanostructures25%

H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h109%

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h107%

H01RElectrically-conductive connections1%

G11CStatic stores0%

H02MApparatus for conversion between ac and ac, between ac and dc, or between dc and dc, and for use with mains or similar power supply systems0%

H10BElectronic memory devices0%

Y02BClimate change mitigation technologies related to buildings, e.g. housing, house appliances or related end-user applications0%

PatentTitleYear

12,598,787Field effect transistor with dual layer isolation structure and method2026 12,557,376Semiconductor device structure and methods of forming the same2026 12,538,569Tuning tensile strain on FinFET2026 12,520,565Semiconductor structure and method for forming the same2026 12,507,440Multi-layer channel structures and methods of fabricating the same in field-effect transistors2025 12,464,812Semiconductor device structure including forksheet transistors and methods of forming the same2025 12,464,750Semiconductor device and formation method thereof2025 12,453,147Semiconductor structure and method of fabricating the semiconductor structure2025 12,446,305Uniform gate width for nanostructure devices2025 12,414,357Self-aligned metal gate for multigate device2025 12,402,407Gap-insulated semiconductor device2025 12,389,643Semiconductor device structure2025 12,376,343Self-aligned spacers for multi-gate devices and method of fabrication thereof2025 12,376,365Nanosheet devices with hybrid structures and methods of fabricating the same2025 12,369,369Field effect transistor with asymmetrical source/drain region and method2025 12,347,486Forming method of resistive random-access memory array2025 12,327,963Electrical receptacle connector with central shield2025 12,322,907Electrical receptacle connector with metallic plate2025 12,324,229Semiconductor device structure including forksheet transistors and methods of forming the same2025 12,302,630Integrated circuit with backside trench for metal gate definition2025 12,300,719Structure and formation method of semiconductor device with isolation structure2025 12,300,723Transistor including downward extending silicide2025 12,300,731Multigate device with air gap spacer and backside rail contact and method of fabricating thereof2025 12,266,704Semiconductor devices including horizontal gate-all-around (hGAA) nanostructure transistors and methods of forming2025 12,249,621Semiconductor structure with dielectric fin feature2025 12,230,928Electrical receptacle connector2025 12,191,305Integration of silicon channel nanostructures and silicon-germanium channel nanostructures2025 12,183,799Semiconductor device with gate isolation features and fabrication method of the same2024 12,170,334Isolation structures and methods of forming the same in field-effect transistors2024 12,170,279Hybrid semiconductor device2024 12,148,812Nano-sheet-based devices having inner spacer structures or gate portions with variable dimensions2024 12,132,115Semiconductor device structure with dielectric stressor2024 12,125,877Nanostructure field-effect transistor device with dielectric layer for reducing substrate leakage or well isolation leakage and methods of forming2024 12,107,087Semiconductor device with gate isolation structure and method for forming the same2024 12,100,770Field effect transistor with gate isolation structure and method2024 12,057,477Semiconductor structure with hybrid nanostructures2024 12,040,371Multi-layer channel structures and methods of fabricating the same in field-effect transistors preliminary class2024 12,033,899Self-aligned metal gate for multigate device2024 12,009,261Nanosheet devices with hybrid structures and methods of fabricating the same2024 11,996,410Gap-insulated semiconductor device2024 11,990,471Gate isolation for multigate device2024 11,984,488Multigate device with air gap spacer and backside rail contact and method of fabricating thereof2024 11,942,478Semiconductor device structure and methods of forming the same2024 11,942,513Semiconductor structure and method of fabricating the semiconductor structure2024 11,876,119Semiconductor device with gate isolation features and fabrication method of the same2024 11,862,734Self-aligned spacers for multi-gate devices and method of fabrication thereof2024 11,855,138Semiconductor device structure2023 11,855,078Semiconductor device structure including forksheet transistors and methods of forming the same2023 11,855,079Integrated circuit with backside trench for metal gate definition2023 11,855,096Uniform gate width for nanostructure devices2023 11,817,504Isolation structures and methods of forming the same in field-effect transistors2023 11,798,944Integration of silicon channel nanostructures and silicon-germanium channel nanostructures2023 11,710,737Hybrid semiconductor device2023 11,699,729Semiconductor devices and methods2023 11,682,697Fin recess last process for FinFET fabrication2023 11,670,550Nanostructure field-effect transistor device and method of forming2023 11,637,042Self-aligned metal gate for multigate device2023 11,637,102Gate isolation for multigate device2023 11,631,770Structure and formation method of semiconductor device with stressor2023 11,610,977Methods of forming nano-sheet-based devices having inner spacer structures with different widths2023 11,581,415Multi-layer channel structures and methods of fabricating the same in field-effect transistors2023 11,552,574Interleaved three phase Y-delta connected power converter2023 11,527,534Gap-insulated semiconductor device2022 11,462,612Semiconductor device structure2022 11,315,925Uniform gate width for nanostructure devices2022 11,302,825Self-aligned spacers for multi-gate devices and method of fabrication thereof2022 11,296,199Semiconductor devices and methods2022 11,296,081Integration of silicon channel nanostructures and silicon-germanium channel nanostructures2022 11,257,903Method for manufacturing semiconductor structure with hybrid nanostructures2022 11,222,948Semiconductor structure and method of fabricating the semiconductor structure2022 11,201,225Structure and formation method of semiconductor device with stressor2021

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2021–2026Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (66)· patent assignee history

2021–2026Based in TW· patent location history

2023Patents assigned to UNIV NAT TAIWAN SCIENCE & TECHNOLOGY (1)· patent assignee history

2025Patents assigned to ADVANCED CONNECTEK INC (3)· patent assignee history

2025Patents assigned to UNITED MICROELECTRONICS CORP (1)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
TAIWAN SEMICONDUCTOR MFG CO LTD	66	2021–2026
ADVANCED CONNECTEK INC	3	2025
UNITED MICROELECTRONICS CORP	1	2025
UNIV NAT TAIWAN SCIENCE & TECHNOLOGY	1	2023

Locations

Location	Patents	Span
TW	71	2021–2026