Inventor
CHE-HAO CHANG
Inventor
TW
Overview
Patents· 35 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices27%
H01LSemiconductor devices25%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1020%
B82YSpecific uses or applications of nanostructures18%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h108%
C23CCoating metallic material2%
PatentTitleYear
12,588,231Method of gap filling for semiconductor device202612,550,402Nanostructure field-effect transistor device and method of forming202612,543,343Semiconductor structure and method for forming the same202612,532,510Profile control of isolation structures in semiconductor devices202612,501,697Methods of forming semiconductor devices202512,495,568Dummy Fin structures and methods of forming same202512,477,775Nanostructure field-effect transistor device and method of forming202512,426,335Reducing k values of dielectric films through anneal202512,363,979Nanosheet field-effect transistor device including multi-layer spacer film and method of forming202512,324,208Method for manufacturing semiconductor device including annealing treatment of inner spacer layer202512,288,814Semiconductor device and method of manufacture202512,272,735Transistor gate structures and methods of forming the same202512,249,639Semiconductor device including multiple inner spacers with different etch rates and method of making202512,218,221Semiconductor device and method202512,206,013Post-formation mends of dielectric features202512,206,012Reducing K values of dielectric films through anneal202512,087,843Semiconductor device and manufacturing method thereof202412,020,991High-k gate dielectric and method forming same202412,015,031Semiconductor device and method202412,009,407Nanosheet field-effect transistor device and method of forming202411,942,329Formation method of semiconductor device with dielectric isolation structure202411,923,432Semiconductor device and method202411,916,132Semiconductor device and method of manufacture202411,901,439Semiconductor device and method202411,824,104Method of gap filling for semiconductor device202311,757,020Semiconductor device and method202311,710,782Post-formation mends of dielectric features202311,699,621Method for patterning a lanthanum containing layer202311,682,711Semiconductor device having multi-layered gate spacers202311,664,441Nanosheet field-effect transistor device and method of forming202311,545,559Semiconductor device and method202311,469,229Semiconductor device and method202211,444,177Semiconductor device and method202211,437,492Semiconductor device and method of manufacture202211,316,034Post-formation mends of dielectric features2022Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2022–2026Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (35)· patent assignee history
2022–2026Based in TW· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TAIWAN SEMICONDUCTOR MFG CO LTD | 35 | 2022–2026 |
Locations
| Location | Patents | Span |
|---|---|---|
| TW | 35 | 2022–2026 |