Inventor
Zhihao Chen
Inventor
Plano, TX, US
Overview
Patents· 20 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Wprimary
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1013%
C08GMacromolecular compounds obtained otherwise than by reactions only involving unsaturated carbon-to-carbon bonds7%
C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients7%
G02BOptical elements, systems or apparatus7%
C07FAcyclic, carbocyclic or heterocyclic compounds containing elements other than carbon, hydrogen, halogen, oxygen, nitrogen, sulfur, selenium or tellurium6%
C08JWorking-up6%
C08LCompositions of macromolecular compounds6%
E04BGeneral building constructions6%
G10KSound-producing devices6%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h106%
PatentTitleYear
10,730,995Reactive flame retardants for polyurethane and polyisocyanurate foams202010,723,833Reactive flame retardants for polyurethane and polyisocyanurate foams202010,597,511Reactive flame retardant blends for flexible polyurethane foam202010,251,568Method and system for optical blood pressure monitoring201910,208,187Reactive flame retardants for flexible polyurethane foams2019D0818024Panoramic camera20188,728,894'Method for fabricating an NMOS transistor'20147,504,339'Method to form shallow trench isolation with rounded upper corner for advanced semiconductor circuits'20097,087,887'Optical multiphase flow sensor'20067,068,868'Sensing devices based on evanescent optical coupling'20067,060,964'Reflection-mode fiber sensing devices'20066,930,018'Shallow trench isolation structure and method'20056,917,093'Method to form shallow trench isolation with rounded upper corner for advanced semiconductor circuits'20056,912,343'Adjustable fiber optical filters'20056,897,516'Flash memory array structure and method of forming'20056,828,213'Method to improve STI nano gap fill and moat nitride pull back'20046,818,526'Method for moat nitride pull back for shallow trench isolation'20046,737,333'Semiconductor device isolation structure and method of forming'20046,566,200'Flash memory array structure and method of forming'20036,524,930'Method for forming a bottom corner rounded STI'2003Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2003–2009Patents assigned to TEXAS INSTRUMENTS INC (9)· patent assignee history
2003–2009Based in Plano, TX, US· patent location history
2005–2006Based in Carlsbad, CA, US· patent location history
2006Patents assigned to IFOS INC (3)· patent assignee history
2014–2018Patents assigned to CHEN ZHIHAO (2)· patent assignee history
2018Based in Irvine, CA, US· patent location history
2019–2020Patents assigned to ICL IP AMERICA INC (4)· patent assignee history
2019Patents assigned to AGENCY SCIENCE TECH & RES (1)· patent assignee history
2019–2020Based in Floral Park, NY, US· patent location history
2019Based in Singapore, SG· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TEXAS INSTRUMENTS INC | 9 | 2003–2009 |
| ICL IP AMERICA INC | 4 | 2019–2020 |
| IFOS INC | 3 | 2006 |
| CHEN ZHIHAOself | 2 | 2014–2018 |
| AGENCY SCIENCE TECH & RES | 1 | 2019 |
Locations
| Location | Patents | Span |
|---|---|---|
| Plano, Texas, US | 9 | 2003–2009 |
| Floral Park, New York, US | 4 | 2019–2020 |
| Carlsbad, California, US | 4 | 2005–2006 |
| Singapore, SG | 1 | 2019 |
| Irvine, California, US | 1 | 2018 |