Inventor

Takeshi Haraguchi

Inventor

Tokyo, JP

Overview

2002–2020

Patent span

Electricity

Primary field (CPC H)

Patents· 15 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H01Jprimary

H01JElectric discharge tubes or discharge lamps41%

B82YSpecific uses or applications of nanostructures34%

A61KPreparations for medical, dental or toiletry purposes6%

C12NMicroorganisms or enzymes6%

G03FPhotomechanical production of textured or patterned surfaces, e.g. for printing, for processing of semiconductor devices6%

A61PSpecific therapeutic activity of chemical compounds or medicinal preparations3%

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h103%

PatentTitleYear

10,844,376Structurally-enhanced miRNA inhibitor S-TuD2020 8,563,709'Method for inhibiting function of micro-RNA'2013 8,390,201'Multi-column electron beam exposure apparatus and magnetic field generation device'2013 8,330,344'Electron gun minimizing sublimation of electron source and electron beam exposure apparatus using the same'2012 7,919,750'Electron gun, electron beam exposure apparatus, and exposure method'2011 7,394,068'Mask inspection apparatus, mask inspection method, and electron beam exposure system'2008 6,870,310'Multibeam generating apparatus and electron beam drawing apparatus'2005 6,804,288'Electron beam exposure apparatus and electron beam deflection apparatus'2004 6,787,780'Multi-beam exposure apparatus using a multi-axis electron lens, fabrication method of a semiconductor device'2004 6,777,694'Electron beam exposure system and electron lens'2004 6,764,925'Semiconductor device manufacturing system and electron beam exposure apparatus'2004 6,727,658'Electron beam generating apparatus and electron beam exposure apparatus'2004 6,703,624'Multi-beam exposure apparatus using a multi-axis electron lens, electron lens convergencing a plurality of electron beam and fabrication method of a semiconductor device'2004 6,509,568'Electrostatic deflector for electron beam exposure apparatus'2003 6,465,796'Charge-particle beam lithography system of blanking aperture array type'2002

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2002–2013Patents assigned to ADVANTEST CORP (12)· patent assignee history

2002–2020Based in Tokyo, JP· patent location history

2005Patents assigned to CANON KK (1)· patent assignee history

2012–2013Patents assigned to HARAGUCHI TAKESHI (3)· patent assignee history

2012–2013Patents assigned to YASUDA HIROSHI (2)· patent assignee history

2013–2020Patents assigned to UNIV TOKYO (2)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
ADVANTEST CORP	12	2002–2013
HARAGUCHI TAKESHIself	3	2012–2013
UNIV TOKYO	2	2013–2020
YASUDA HIROSHI	2	2012–2013
CANON KK	1	2005

Locations

Location	Patents	Span
Tokyo, JP	15	2002–2020