Inventor
Naein Lee
Inventor
Seoul, KR
Overview
Patents· 25 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Lprimary
H01LSemiconductor devices35%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1032%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1016%
H10DInorganic electric semiconductor devices14%
H10BElectronic memory devices1%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation1%
PatentTitleYear
10,497,647Semiconductor devices and methods of fabricating the same201910,438,802Method of fabricating a semiconductor device201910,199,325Semiconductor device and method of fabricating the same201910,192,782Method of manufacturing semiconductor device using a plurality of etch stop layers201910,186,485Planarized interlayer dielectric with air gap isolation201910,141,258Semiconductor devices having staggered air gaps201810,109,665Semiconductor device and method of fabricating the same201810,049,997Semiconductor device and method of fabricating the same20189,972,528Semiconductor devices20189,953,827Method of forming semiconductor device having dielectric layer and related system20189,929,099'Planarized interlayer dielectric with air gap isolation'20189,911,644'Semiconductor devices and methods of fabricating the same'20189,842,803'Semiconductor devices including gaps between conductive patterns'20179,748,170'Semiconductor devices having staggered air gaps'20179,576,848'Method of treating a porous dielectric layer and a method of fabricating a semiconductor device using the same'20179,548,389'Semiconductor devices and methods of forming the same'20179,524,937'Semiconductor devices and methods of fabricating the same'20169,520,300'Semiconductor devices and methods of fabricating the same'20169,343,409'Semiconductor devices having staggered air gaps'20169,312,171'Semiconductor devices having through-electrodes and methods for fabricating the same'20169,299,836'Semiconductor devices including multilayer source/drain stressors and methods of manufacturing the same'20169,252,235'Semiconductor devices and methods of forming the same'20169,082,874'Semiconductor device including transistor and method of manufacturing the same'20158,937,343'Semiconductor device including transistor and method of manufacturing the same'20158,759,183'Methods of forming semiconductor devices using electrolyzed sulfuric acid (ESA)'2014Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2014–2019Patents assigned to SAMSUNG ELECTRONICS CO LTD (25)· patent assignee history
2014–2019Patents assigned to LEE NAEIN (3)· patent assignee history
2014–2019Based in Seoul, KR· patent location history
2016–2019Patents assigned to YOU WOOKYUNG (2)· patent assignee history
2016Patents assigned to AHN SANGHOON (1)· patent assignee history
2018Based in Hwasung, KR· patent location history
2019Patents assigned to AHN SANG HOON (1)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| SAMSUNG ELECTRONICS CO LTD | 25 | 2014–2019 |
| LEE NAEINself | 3 | 2014–2019 |
| YOU WOOKYUNG | 2 | 2016–2019 |
| AHN SANG HOON | 1 | 2019 |
| AHN SANGHOON | 1 | 2016 |
Locations
| Location | Patents | Span |
|---|---|---|
| Seoul, KR | 24 | 2014–2019 |
| Hwasung, KR | 1 | 2018 |