Inventor
Madhusudan Mukhopadhyay
Inventor
Singapore, SG
Overview
Patents· 6 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Wprimary
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1043%
H10DInorganic electric semiconductor devices29%
B24BMachines, devices, or processes for grinding or polishing14%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests14%
PatentTitleYear
6,399,448'Method for forming dual gate oxide'20026,368,900'Method of fabricating an antifuse element'20026,362,102'Method of forming top metal contact to antifuse'20026,306,721'Method of forming salicided poly to metal capacitor'20016,248,006'CMP uniformity'20016,228,770'Method to form self-sealing air gaps between metal interconnects'2001Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2001–2002Patents assigned to CHARTERED SEMICONDUCTOR MFG (5)· patent assignee history
2001Patents assigned to CHARTERED SEMICONDUCTOR MAUFAC (1)· patent assignee history
2001–2002Based in Singapore, SG· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| CHARTERED SEMICONDUCTOR MFG | 5 | 2001–2002 |
| CHARTERED SEMICONDUCTOR MAUFAC | 1 | 2001 |
Locations
| Location | Patents | Span |
|---|---|---|
| Singapore, SG | 6 | 2001–2002 |