Inventor

Koichiro Ishibashi

Inventor
Warabi, JP

Overview

193→
Patents
1989–2020
Patent span
Electricity
Primary field (CPC H)

Patents· 193 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

G11Cprimary
G11CStatic stores26%
H10DInorganic electric semiconductor devices13%
H10BElectronic memory devices13%
H03KPulse technique10%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests10%
G06FElectric digital data processing7%
Y02DClimate change mitigation technologies in information and communication technologies [ict], i.e. information and communication technologies aiming at the reduction of their own energy use3%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h103%
F15BSystems acting by means of fluids in general2%
H01LSemiconductor devices1%
PatentTitleYear
D0894247Gripper202010,573,376Lower-power semiconductor memory device202010,399,211Chuck apparatus201910,323,660Cylinder guide mechanism and cylinder with guide mechanism201910,242,733Semiconductor memory device that can stably perform writing and reading without increasing current consumption even with a low power supply voltage201910,229,732Semiconductor device201910,183,335Chuck apparatus20199,984,744Semiconductor memory device that can stably perform writing and reading without increasing current consumption even with a low power supply voltage20189,985,038Semiconductor integrated circuit device20189,928,900'Low power semiconductor memory device'20189,767,893'Semiconductor memory device that can stably perform writing and reading without increasing current consumption even with a low power supply voltage'20179,754,659'Low-power semiconductor device'20179,746,006'Fluid pressure cylinder'20179,646,678'Semiconductor integrated circuit device'20179,530,485'Semiconductor integrated circuit device with reduced leakage current'20169,496,028'Semiconductor memory device that can stably perform writing and reading without increasing current consumption even with a low power supply voltage'20169,449,678'Semiconductor integrated circuit device'20169,353,861'Coupling structure for piston used in fluid-pressure cylinder, and coupling method therefor'20169,286,968'Semiconductor integrated circuit device including SRAM cell array and a wiring layer for supplying voltage to well regions of SRAM cells provided on a region exterior of SRAM cell array'20169,218,873'Semiconductor memory device that can stably perform writing and reading without increasing current consumption even with a low power supply voltage'20159,214,221'Semiconductor device with logic circuit, SRAM circuit and standby state'20159,111,636'Semiconductor integrated circuit device with reduced leakage current'20159,030,176'Semiconductor integrated circuit'20159,010,236'Linear actuator'20158,998,491'Linear actuator'20158,955,424'Linear actuator'20158,939,064'Linear actuator'20158,797,791'Semiconductor integrated circuit device with reduced leakage current'20148,711,607'Semiconductor device'20148,683,911'Linear actuator'20148,630,142'Semiconductor memory device that can stably perform writing and reading without increasing current consumption even with a low power supply voltage'20148,482,083'Semiconductor integrated circuit device including SRAM memory cells having two P-channel MOS transistors and four N-channel MOS transistors and with four wiring layers serving as their gate electrodes'20138,437,179'Semiconductor integrated circuit device with reduced leakage current'20138,364,988'Substrate bias switching unit for a low power processor'20138,325,553'Static memory cell having independent data holding voltage'20128,232,589'Semiconductor integrated circuit device with reduced leakage current'20128,218,390'Semiconductor memory device that can stably perform writing and reading without increasing current consumption even with a low power supply voltage'20128,125,017'Semiconductor integrated circuit device with reduced leakage current'2012D0645054'Fluid pressure cylinder with table'2011D0644665'Fluid pressure cylinder with table'20118,009,500'Semiconductor memory device that can stably perform writing and reading without increasing current consumption even with a low power supply voltage'20117,978,560'Static memory cell having independent data holding voltage'20117,964,484'Semiconductor integrated circuit device with reduced leakage current'20117,961,545'Semiconductor device'20117,958,379'Substrate bias switching unit for a low power processor'20117,781,846'Semiconductor integrated circuit device'20107,737,509'Semiconductor integrated circuit device'20107,710,764'Semiconductor memory cells with shared p-type well'20107,706,205'Static memory cell having independent data holding voltage'20107,652,333'Semiconductor integrated circuit'20107,646,662'Semiconductor device'20107,612,417'Semiconductor integrated circuit device'20097,598,796'Semiconductor integrated circuit including charging pump'20097,589,566'Semiconductor device provided with antenna ratio countermeasure circuit'20097,589,993'Semiconductor memory device with memory cells operated by boosted voltage'20097,569,881'Semiconductor integrated circuit device with reduced leakage current'20097,518,404'Semiconductor integrated circuit device'20097,502,275'Semiconductor memory device'20097,475,261'Substrate bias switching unit for a low power processor'20097,474,584'Semiconductor device'20097,408,231'SRAM memory semiconductor integrated circuit device'20087,406,643'Semiconductor integrated circuit device, method of manufacturing the device, and computer readable medium'20087,397,693'Semiconductor memory device with memory cells operated by boosted voltage'20087,397,282'Semiconductor integrated circuit device'20087,388,238'Semiconductor integrated circuit device with reduced leakage current'20087,321,252'Semiconductor integrated circuit'20087,272,068'Semiconductor device'20077,269,780'Power management for circuits with inactive state data save and restore scan chain'20077,251,183'Static random access memory having a memory cell operating voltage larger than an operating voltage of a peripheral circuit'20077,222,244'Semiconductor device including a prediction circuit to control a power status control circuit which controls the power status of a function circuit'20077,219,272'Semiconductor integrated circuit with memory redundancy circuit'20077,190,609'Semiconductor memory device with memory cells operated by boosted voltage'20077,167,033'Data retaining circuit'20077,151,395'Data retaining circuit'20067,149,113'Semiconductor integrated circuit device'20067,149,910'Apparatus for processing a set of instructions initially at a low speed for a predetermined time then processing the set of instructions at a higher speed until completion'20067,138,852'Semiconductor integrated circuit device'20067,132,871'Data retaining circuit'20067,112,999'Semiconductor integrated circuit device'20067,099,183'Semiconductor device'20067,087,942'Semiconductor integrated circuit device with reduced leakage current'20067,046,075'Semiconductor integrated circuit'20066,998,674'Semiconductor integrated circuit device with reduced leakage current'20066,987,415'Semiconductor integrated circuit'20066,953,975'Semiconductor integrated circuit device'20056,946,865'Semiconductor integrated circuit apparatus'20056,943,613'Semiconductor integrated circuit device in which operating frequency, supply voltage and substrate bias voltage are controllable to reduce power consumption'20056,940,739'Semiconductor memory device'20056,934,923'Semiconductor integrated circuit, method and program for designing the semiconductor integrated circuit'20056,930,504'Semiconductor integrated circuit device'20056,922,113'Semiconductor integrated circuit having oscillators or oscillation circuits connected to a wiring line at connection points with intervals in length there between'20056,922,094'Data retaining circuit'20056,917,556'Static memory cell having independent data holding voltage'20056,914,803'Low-power semiconductor memory device'20056,906,551'Semiconductor integrated circuit device'20056,894,944'Semiconductor integrated circuit device'20056,885,057'Semiconductor integrated circuit device with reduced leakage current'20056,867,637'Semiconductor integrated circuit device including a substrate bias controller and a current limiting circuit'20056,864,539'Semiconductor integrated circuit device having body biasing circuit for generating forward well bias voltage of suitable level by using simple circuitry'20056,847,252'Semiconductor integrated circuit device'20056,839,268'Semiconductor memory apparatus, semiconductor apparatus, data processing apparatus and computer system'20056,833,750'Semiconductor integrated circuit device'20046,815,748'Semiconductor integrated circuit device with connections formed using a conductor embedded in a contact hole'20046,815,778'Semiconductor integrated circuit device with connections formed using a conductor embedded in a contact hole'20046,795,332'Semiconductor memory device with memory cells operated by boosted voltage'20046,782,499'Semiconductor integrated circuit device, method of manufacturing the device, and computer readable medium'20046,778,002'Semiconductor integrated circuit device including a substrate bias controller and a current limiting circuit'20046,774,705'Semiconductor integrated circuit device in which operating frequency, supply voltage and substrate bias voltage are controllable to reduce power consumption'20046,774,706'Semiconductor integrated circuit device'20046,756,804'Semiconductor integrated circuit device'20046,753,231'Semiconductor integrated circuit and method for manufacturing the same'20046,715,090'Processor for controlling substrate biases in accordance to the operation modes of the processor'20046,707,334'Semiconductor integrated circuit'20046,703,667'Semiconductor integrated circuit device with connections formed using a conductor embedded in a contact hole'20046,683,353'Semiconductor integrated circuit device'20046,683,503'Semiconductor integrated circuit having oscillators or oscillation circuits connected to a wiring line at connection points with intervals in length therebetween'20046,677,649'SRAM cells with two P-well structure'20046,665,209'Semiconductor memory apparatus, semiconductor apparatus, data processing apparatus and computer system'20036,657,911'Semiconductor device with low power consumption memory circuit'20036,653,868'Semiconductor integrated circuit, method and program for designing the semiconductor integrated circuit'20036,653,890'Well bias control circuit'20036,639,828'Static memory cell having independent data holding voltage'20036,630,857'Semiconductor integrated circuit apparatus'20036,611,458'Semiconductor integrated circuit device'20036,600,360'Semiconductor integrated circuit'20036,601,154'Cache memory employing dynamically controlled data array start timing and a microcomputer using the same'20036,563,180'Semiconductor integrated circuit device'20036,559,006'Semiconductor integrated circuit and method for manufacturing the same'20036,560,141'Semiconductor integrated circuit with memory redundancy circuit'20036,525,985'Semiconductor memory device'20036,518,825'Semiconductor integrated circuit device'20036,515,894'Semiconductor memory apparatus, semiconductor apparatus, data processing apparatus and computer system'20036,512,245'Semiconductor integrated circuit device'20036,496,952'Semiconductor integrated circuit device, method of manufacturing the device, and computer readable medium'20026,489,824'Timing-control circuit device and clock distribution system'20026,489,833'Semiconductor integrated circuit device'20026,483,374'Semiconductor integrated circuit'20026,469,950'Static memory cell having independent data holding voltage'20026,466,077'Semiconductor integrated circuit device including a speed monitor circuit and a substrate bias controller responsive to the speed-monitor circuit'20026,436,753'Semiconductor integrated circuit and method for manufacturing the same'20026,424,015'Semiconductor integrated circuit device'20026,404,232'Semiconductor integrated circuit device'20026,396,732'Semiconductor memory apparatus, semiconductor apparatus, data processing apparatus and computer system'20026,388,936'Static memory cell having independent data holding voltage'20026,389,523'Cache memory employing dynamically controlled data array start timing and a microprocessor using the same'20026,380,798'Semiconductor integrated circuit apparatus'20026,353,569'Semiconductor memory device'20026,342,710'Semiconductor integrated circuit'20026,337,593'Semiconductor integrated circuit'20026,318,779'Parallelly-gripping chuck'20016,307,217'Semiconductor memory device having driver and load MISFETs and capacitor elements'20016,300,807'Timing-control circuit device and clock distribution system'20016,295,218'Semiconductor device'2001D0440988'Chuck for industrial robot'20016,215,716'Static memory cell having independent data holding voltage'2001D0438220'Chuck for industrial robot'20016,140,686'Semiconductor integrated circuit device'20006,121,646'Semiconductor integrated circuit'20006,108,262'Static memory cell having independent data holding voltage'20006,091,629'High speed semiconductor memory apparatus including circuitry to increase writing and reading speed'20006,070,234'Cacche memory employing dynamically controlled data array start timing and a microcomputer using the same'20006,058,038'Semiconductor device'20005,944,326'Linear guide air chuck'19995,943,284'Semiconductor memory device'19995,930,197'Semiconductor memory device'19995,907,867'Translation lookaside buffer supporting multiple page sizes'19995,894,433'Static memory cell having independent data holding voltage'19995,860,127'Cache memory employing dynamically controlled data array start timing and a microcomputer using the same'19995,834,851'SRAM having load transistor formed above driver transistor'19985,767,554'Semiconductor integrated circuit device and process for fabricating the same'19985,740,115'Semiconductor memory device'19985,731,219'Process for fabricating a semiconductor integrated circuit device'19985,700,704'Process for fabricating a semiconductor integrated circuit device'19975,677,887'Semiconductor memory device having a large storage capacity and a high speed operation'19975,668,770'Static memory cell having independent data holding voltage'19975,656,836'Semiconductor integrated circuit device and process for fabricating the same'19975,652,457'Semiconductor integrated circuit device and process for fabricating the same'19975,572,480'Semiconductor integrated circuit device and process for fabricating the same'19965,519,662'Semiconductor memory device'19965,422,839'Semiconductor memory device'19955,296,729'Semiconductor memory device having static random access memory'19945,239,196'SRAM with dual word lines overlapping drive transistor gates'19935,172,335'Semiconductor memory with divided bit load and data bus lines'19925,148,387'Logic circuit and data processing apparatus using the same'19925,134,581'Highly stable semiconductor memory with a small memory cell area'19925,132,771'Semiconductor memory device having flip-flop circuits'19925,126,974'Sense amplifier for a memory device'19925,047,706'Constant current-constant voltage circuit'19914,992,677'High speed MOSFET output buffer with low noise'19914,935,901'Semiconductor memory with divided bit load and data bus lines'19904,853,894'Static random-access memory having multilevel conductive layer'19894,841,486'Semiconductor memory device and sense amplifier'19894,797,717'Semiconductor memory device'1989

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1989–2010Patents assigned to HITACHI LTD (84)· patent assignee history
1989–2019Based in Tokyo, JP· patent location history
1993–2016Patents assigned to ISHIBASHI KOICHIRO (17)· patent assignee history
1995–2003Based in Kodaira, JP· patent location history
1997–2020Based in Warabi, JP· patent location history
2001–2011Patents assigned to HITACHI ULSI SYS CO LTD (12)· patent assignee history
2003–2010Patents assigned to RENESAS TECH CORP (48)· patent assignee history
2011–2020Patents assigned to RENESAS ELECTRONICS CORP (31)· patent assignee history
2011–2020Based in Tsukubamirai, JP· patent location history
2011–2013Based in Saitama, JP· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
HITACHI LTD841989–2010
RENESAS TECH CORP482003–2010
RENESAS ELECTRONICS CORP312011–2020
ISHIBASHI KOICHIROself171993–2016
HITACHI ULSI SYS CO LTD122001–2011
Locations
LocationPatentsSpan
Warabi, JP1331997–2020
Tokyo, JP281989–2019
Tsukubamirai, JP132011–2020
Kodaira, JP71995–2003
Saitama, JP42011–2013