Inventor
Jin Gun Koo
Inventor
Daejeon, KR
Overview
Patents· 18 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices39%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1018%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1012%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation9%
H01LSemiconductor devices6%
H03KPulse technique6%
B82YSpecific uses or applications of nanostructures3%
G03FPhotomechanical production of textured or patterned surfaces, e.g. for printing, for processing of semiconductor devices3%
G09GArrangements or circuits for control of indicating devices using static means to present variable information3%
PatentTitleYear
9,123,548'Semiconductor device and method of fabricating the same'20158,975,692'Semiconductor device and method of fabricating the same'20158,629,020'Semiconductor device and method of fabricating the same'20147,902,577'Image sensor having heterojunction bipolar transistor and method of fabricating the same'20117,741,665'High-quality CMOS image sensor and photo diode'20107,190,432'Exposure apparatus'20077,170,044'Semiconductor photodetector for detecting light having a wavelength in the ultraviolet blue ranges'20077,141,464'Method of fabricating T-type gate'20066,855,581'Method for fabricating a high-voltage high-power integrated circuit device'20056,852,597'Method for fabricating power semiconductor device having trench gate structure'20056,774,697'Input and output port circuit'20046,534,365'Method of fabricating TDMOS device using self-align technique'20036,511,886'Method for manufacturing trench-gate type power semiconductor device'20036,404,011'Semiconductor power integrated circuit'20026,284,605'Method for fabricating semiconductor power integrated circuit'20016,211,018'Method for fabricating high density trench gate type power device'20016,087,232'Fabrication method of lateral double diffused MOS transistors'20006,043,970'High voltage driving circuit reducing a transient current'2000Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2000–2015Patents assigned to KOREA ELECTRONICS TELECOMM (16)· patent assignee history
2000–2015Based in Daejeon, KR· patent location history
2000–2005Based in Daejon, KR· patent location history
2001Patents assigned to ELECTRICS AND TELECOMM RES INS (1)· patent assignee history
2001–2003Based in Taejon, KR· patent location history
2004–2007Based in Kumi-shi, KR· patent location history
2014Patents assigned to ELECT & TELECOMM RESEARCH INST (1)· patent assignee history
2014Patents assigned to KIM JONGDAE (1)· patent assignee history
2014Patents assigned to KIM SANG GI (1)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| KOREA ELECTRONICS TELECOMM | 16 | 2000–2015 |
| ELECT & TELECOMM RESEARCH INST | 1 | 2014 |
| ELECTRICS AND TELECOMM RES INS | 1 | 2001 |
| KIM JONGDAE | 1 | 2014 |
| KIM SANG GI | 1 | 2014 |
Locations
| Location | Patents | Span |
|---|---|---|
| Daejeon, KR | 8 | 2000–2015 |
| Taejon, KR | 5 | 2001–2003 |
| Kumi-shi, KR | 3 | 2004–2007 |
| Daejon, KR | 2 | 2000–2005 |