LexDanaLexDanabeta
Inventor

HYEON-JIN SHIN

Inventor
KR

Overview

3→
Patents
2022–2023
Patent span
Electricity
Primary field (CPC H)

Patents· 3 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H01Lprimary
H01LSemiconductor devices21%
C23CCoating metallic material14%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1014%
B01JChemical or physical processes, e.g. catalysis or colloid chemistry7%
B82YSpecific uses or applications of nanostructures7%
C01BNon-metallic elements7%
H01JElectric discharge tubes or discharge lamps7%
H05BElectric heating7%
H10BElectronic memory devices7%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h107%
PatentTitleYear
11,854,979Semiconductor device202311,407,637Direct graphene growing method202211,270,881Plasma deposition method, plasma deposition apparatus and method of manufacturing semiconductor device2022

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2022–2023Patents assigned to SAMSUNG ELECTRONICS CO LTD (3)· patent assignee history
2022–2023Based in KR· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
SAMSUNG ELECTRONICS CO LTD32022–2023
Locations
LocationPatentsSpan
KR32022–2023