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Inventor

Daniel M. Y. Yang

Inventor
Hsinchu, TW

Overview

2→
Patents
2018–2021
Patent span
Electricity
Primary field (CPC H)

Patents· 2 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

G01Nprimary
G01NInvestigating or analysing materials by determining their chemical or physical properties25%
H01LSemiconductor devices25%
H03KPulse technique25%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1025%
PatentTitleYear
10,978,331Systems and methods for orientator based wafer defect sensing20219,941,881Apparatus and method for latching data including AND-NOR or OR-NAND gate and feedback paths2018

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2018Patents assigned to QUALCOMM INC (1)· patent assignee history
2018Based in San Diego, CA, US· patent location history
2021Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (1)· patent assignee history
2021Based in Hsinchu, TW· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
QUALCOMM INC12018
TAIWAN SEMICONDUCTOR MFG CO LTD12021
Locations
LocationPatentsSpan
Hsinchu, TW12021
San Diego, California, US12018