Inventor
Jae Goan Jeong
Inventor
Kyungki-do, KR
Overview
Patents· 17 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices36%
H10BElectronic memory devices11%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1011%
F16BDevices for fastening or securing constructional elements or machine parts together, e.g. nails, bolts, circlips, clamps, clips or wedges6%
F16LPipes6%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h106%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests6%
C08FMacromolecular compounds obtained by reactions only involving carbon-to-carbon unsaturated bonds3%
C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients3%
C21DModifying the physical structure of ferrous metals3%
PatentTitleYear
11,016,384Photosensitive resin composition, photosensitive resin layer and color filter using same202110,907,229Hot-work mold steel for die casting and method of manufacturing the same20218,187,940'Method for fabricating semiconductor device'20127,795,670'Semiconductor device and method for fabricating the same'20107,071,068'Transistor and method for fabricating the same'20066,794,714'Transistor and method for fabricating the same'20046,569,750'Method for forming device isolation film for semiconductor device'20036,329,694'Semiconductor device with ESD protective circuit'20016,207,997'Thin film transistor for antistatic circuit and method for fabricating the same'20016,087,215'Method of fabricating a DRAM device'20006,031,704'Electrostatic protection circuit in a semiconductor device'20005,821,587'Field effect transistors provided with ESD circuit'19985,807,728'Thin film transistor for antistatic circuit and method for fabricating the same'19985,793,588'Electrostatic discharge protection circuit'19985,571,742'Method of fabricating stacked capacitor of DRAM cell'19965,523,250'Method of manufacturing a MOSFET with LDD regions'19965,401,678'Transistor and method for fabricating the same'1995Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1995–2006Patents assigned to HYUNDAI ELECTRONICS IND (12)· patent assignee history
1996–2006Based in Kyungki-do, KR· patent location history
1998Based in Ichon, KR· patent location history
2001Patents assigned to HYUNDAI ELECTRONICS IND CO INC (1)· patent assignee history
2010–2012Patents assigned to HYNIX SEMICONDUCTOR INC (2)· patent assignee history
2012Based in Yongin-si, KR· patent location history
2021Patents assigned to DOOSAN HEAVY IND & CONSTRUCTION CO LTD (1)· patent assignee history
2021Patents assigned to DOOSAN HEAVY IND CONSTR CO LTD (1)· patent assignee history
2021Based in Suwon-si, KR· patent location history
2021Based in Changwon-si, KR· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| HYUNDAI ELECTRONICS IND | 12 | 1995–2006 |
| HYNIX SEMICONDUCTOR INC | 2 | 2010–2012 |
| DOOSAN HEAVY IND & CONSTRUCTION CO LTD | 1 | 2021 |
| DOOSAN HEAVY IND CONSTR CO LTD | 1 | 2021 |
| HYUNDAI ELECTRONICS IND CO INC | 1 | 2001 |
Locations
| Location | Patents | Span |
|---|---|---|
| Kyungki-do, KR | 8 | 1996–2006 |
| Ichon, KR | 2 | 1998 |
| Suwon-si, KR | 1 | 2021 |
| Changwon-si, KR | 1 | 2021 |
| Yongin-si, KR | 1 | 2012 |