Inventor

BRUNO GHYSELEN

Inventor

FR

Overview

2022–2025

Patent span

Electricity

Primary field (CPC H)

Patents· 27 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Pprimary

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1021%

H01LSemiconductor devices19%

H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1016%

H10NElectric solid-state devices not otherwise provided for13%

C30BSingle-crystal growth11%

B81CProcesses or apparatus specially adapted for the manufacture or treatment of microstructural devices or systems4%

H03HImpedance networks, e.g. resonant circuits4%

B81BMicrostructural devices or systems, e.g. micromechanical devices3%

H10DInorganic electric semiconductor devices3%

B06BMethods or apparatus for generating or transmitting mechanical vibrations of infrasonic, sonic, or ultrasonic frequency, e.g. for performing mechanical work in general2%

PatentTitleYear

12,482,701Method for producing a stacked structure2025 12,448,284Membrane transfer method2025 12,421,622Method for producing a monocrystalline layer of lithium niobate by transferring a seed layer of yttria-stabilized zirconia to a silicon carrier substrate and epitaxially growing the monocrystalline layer of lithium niobate and substrate for epitaxial growth of a monocrystalline layer of lithium niobate2025 12,426,507Method for producing a crystalline layer of PZT material by transferring a seed layer of SRTIO3 to a silicon carrier substrate and epitaxially growing the crystalline layer of PZT, and substrate for epitaxial growth of a crystalline layer of PZT2025 12,356,858Method for the production of a single-crystal film, in particular piezoelectric2025 12,234,144Method for sealing cavities using membranes2025 12,178,133Methods for designing and producing a device comprising an array of micro-machined elements, and device produced by said methods2024 12,094,759Method for transferring blocks from a donor substrate onto a receiver substrate by implanting ions in the donor substrate through a mask, bonding the donor substrate to the receiver substrate, and detaching the donor substrate along an embrittlement plane2024 12,087,615Method for manufacturing a film on a support having a non-flat surface2024 12,071,706Process for producing a monoocrystalline layer of AlN material by transferring a SiC-6H seed to a Si carrier substrate and epitaxially growing the monocrystalline layer of AlN material and substrate for the epitaxial growth of a monocrystalline layer of AlN material2024 12,052,921Method for manufacturing a film on a flexible sheet2024 11,976,380Method for manufacturing a monocrystalline layer of GaAs material and substrate for epitaxial growth of a monocrystalline layer of GaAs material2024 11,939,214Method for manufacturing a device comprising a membrane extending over a cavity2024 11,940,407Micro-sensor for detecting chemical species and associated manufacturing method2024 11,935,743Method for manufacturing a monocrystalline layer of diamond or iridium material and substrate for epitaxially growing a monocrystalline layer of diamond or iridium material2024 11,913,134Process for manufacturing a two-dimensional film of hexagonal crystalline structure using epitaxial growth on a transferred thin metal film2024 11,877,514Method for producing a crystalline layer of PZT material by transferring a seed layer of SrTiO2024 11,828,000Method for producing a monocrystalline layer of lithium niobate by transferring a seed layer of yttria-stabilized zirconia to a silicon carrier substrate and epitaxially growing the monocrystalline layer of lithium niobate and substrate for epitaxial growth of a monocrystalline layer of lithium niobate2023 11,776,843Method for transferring blocks from a donor substrate onto a receiver substrate by implanting ions in the donor substrate through a mask, bonding the donor substrate to the receiver substrate, and detaching the donor substrate along an embrittlement plane2023 11,744,153Method for producing a layer by thinning and ion penetration2023 11,706,989Methods for designing and producing a device comprising an array of micromachined elements, and device produced by said methods2023 11,600,766Method for manufacturing a monocrystalline piezoelectric layer2023 11,557,715Method for manufacturing a film on a flexible sheet2023 11,549,195Method for manufacturing a monocrystalline layer of GaAs material and substrate for epitaxtial growth of a monocrystalline layer of GaAs material2023 11,398,595Method for treating a layer obtained by implantation then detachment from a substrate2022 11,373,897Method for manufacturing a film on a support having a non-flat surface2022 11,239,108Method for producing a donor substrate for creating a three-dimensional integrated structure, and method for producing such an integrated structure2022

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2022–2025Patents assigned to SOITEC SILICON ON INSULATOR (27)· patent assignee history

2022–2025Based in FR· patent location history

2025Patents assigned to COMMISSARIAT ENERGIE ATOMIQUE (1)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
SOITEC SILICON ON INSULATOR	27	2022–2025
COMMISSARIAT ENERGIE ATOMIQUE	1	2025

Locations

Location	Patents	Span
FR	27	2022–2025