Inventor

George J. Zydzik

Inventor

Columbia, NJ, US

Overview

41→

Patents

1977–2014

Patent span

Electricity

Primary field (CPC H)

Patents· 41 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H01Sprimary

H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light17%

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1012%

C23CCoating metallic material8%

H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation7%

Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests7%

C03BManufacture, shaping, or supplementary processes6%

G02FOptical devices or arrangements for the control of light by modification of the optical properties of the media of the elements involved therein6%

H10HInorganic light-emitting semiconductor devices having potential barriers6%

G02BOptical elements, systems or apparatus4%

H10DInorganic electric semiconductor devices4%

PatentTitleYear

8,857,372'Method of fabricating optical fiber using an isothermal, low pressure plasma deposition technique'2014 8,252,387'Method of fabricating optical fiber using an isothermal, low pressure plasma deposition technique'2012 7,854,143'Optical fiber preform with improved air/glass interface structure'2010 6,553,790'Process for fabricating optical fiber involving tuning of core diameter profile'2003 6,305,195'Process for fabricating silica article involving joining of discrete bodies'2001 6,208,680'Optical devices having ZNS/CA-MG-fluoride multi-layered mirrors'2001 6,169,756'Vertical cavity surface-emitting laser with optical guide and current aperture'2001 5,821,171'Article comprising a gallium layer on a GaAs-based semiconductor, and method of making the article'1998 5,719,077'Fixture and method for laser fabrication by in-situ cleaving of semiconductor bars'1998 5,625,617'Near-field optical apparatus with a laser having a non-uniform emission face'1997 5,550,089'Gallium oxide coatings for optoelectronic devices using electron beam evaporation of a high purity single crystal Gd.sub.3 Ga.sub.5 O.sub.12 source.'1996 5,451,548'Electron beam deposition of gallium oxide thin films using a single high purity crystal source'1995 5,406,194'Al.sub.x Ga.sub.1-x as probe for use in electro-optic sampling'1995 5,363,398'Absorption resonant rare earth-doped micro-cavities'1994 5,328,854'Fabrication of electronic devices with an internal window'1994 5,315,128'Photodetector with a resonant cavity'1994 5,249,195'Erbium doped optical devices'1993 5,226,053'Light emitting diode'1993 5,216,727'Integrated nonlinear waveguide spectrometer'1993 5,212,395'P-I-N photodiodes with transparent conductive contacts'1993 5,206,871'Optical devices with electron-beam evaporated multilayer mirror'1993 5,170,407'Elimination of heterojunction band discontinuities'1992 5,115,441'Vertical cavity surface emmitting lasers with transparent electrodes'1992 5,068,868'Vertical cavity surface emitting lasers with electrically conducting mirrors'1991 5,047,369'Fabrication of semiconductor devices using phosphosilicate glasses'1991 5,011,794'Procedure for rapid thermal annealing of implanted semiconductors'1991 4,819,039'Devices and device fabrication with borosilicate glass'1989 4,749,255'Coating for optical devices'1988 4,731,293'Fabrication of devices using phosphorus glasses'1988 4,634,474'Coating of III-V and II-VI compound semiconductors'1987 4,617,192'Process for making optical INP devices'1986 4,502,898'Diffusion procedure for semiconductor compound'1985 4,455,351'Preparation of photodiodes'1984 4,309,081'Display devices'1982 4,309,460'Process for producing gold films'1982 4,297,005'Persistent memory cell'1981 4,240,717'Electrodeposition display device'1980 4,240,716'Electrodeposition display device'1980 4,187,530'Structure for solid state switch'1980 4,146,309'Process for producing evaporated gold films'1979 4,013,501'Growth of neodymium doped yttrium aluminum garnet crystals'1977

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1977–1982Patents assigned to BELL TELEPHONE LABOR INC (8)· patent assignee history

1977–2014Based in Columbia, NJ, US· patent location history

1982–1992Based in Warren, NJ, US· patent location history

1984–1994Patents assigned to AT & T BELL LAB (17)· patent assignee history

1988–1989Patents assigned to AMERICAN TELEPHONE & TELEGRAPH (3)· patent assignee history

1996–2001Patents assigned to LUCENT TECHNOLOGIES INC (6)· patent assignee history

2010–2014Patents assigned to OFS FITEL LLC (3)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
AT & T BELL LAB	17	1984–1994
BELL TELEPHONE LABOR INC	8	1977–1982
LUCENT TECHNOLOGIES INC	6	1996–2001
AMERICAN TELEPHONE & TELEGRAPH	3	1988–1989
OFS FITEL LLC	3	2010–2014

Locations

Location	Patents	Span
Columbia, New Jersey, US	38	1977–2014
Warren, New Jersey, US	3	1982–1992