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Inventor

Tsu Shih

Inventor
Hsinchu, TW

Overview

59→
Patents
1997–2006
Patent span
Electricity
Primary field (CPC H)

Patents· 59 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Wprimary
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1036%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1025%
B24BMachines, devices, or processes for grinding or polishing14%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests9%
G03FPhotomechanical production of textured or patterned surfaces, e.g. for printing, for processing of semiconductor devices5%
B24DTools for grinding, buffing or sharpening2%
B08BCleaning in general1%
B29CShaping or joining of plastics1%
B29KIndexing scheme associated with subclasses b29b, b29c or b29d, relating to moulding materials or to materials for moulds, reinforcements, fillers or preformed parts, e.g. inserts1%
B29LIndexing scheme associated with subclass b29c, relating to particular articles1%
PatentTitleYear
7,153,197'Method for achieving uniform CU CMP polishing'20067,091,126'Method for copper surface smoothing'20066,833,323'Method for forming patterned features at a semiconductor wafer periphery to prevent metal peeling'20046,821,896'Method to eliminate via poison effect'20046,787,470'Sacrificial feature for corrosion prevention during CMP'20046,767,833'Method for damascene reworking'20046,736,701'Eliminate broken line damage of copper after CMP'20046,726,535'Method for preventing localized Cu corrosion during CMP'20046,686,284'Chemical mechanical polisher equipped with chilled retaining ring and method of using'20046,682,396'Apparatus and method for linear polishing'20046,638,868'Method for preventing or reducing anodic Cu corrosion during CMP'20036,638,328'Bimodal slurry system'20036,634,930'Method and apparatus for preventing metal corrosion during chemical mechanical polishing'20036,635,211'Reinforced polishing pad for linear chemical mechanical polishing and method for forming'20036,620,034'Way to remove Cu line damage after Cu CMP'20036,620,725'Reduction of Cu line damage by two-step CMP'20036,602,780'Method for protecting sidewalls of etched openings to prevent via poisoning'20036,599,838'Method for forming metal filled semiconductor features to improve a subsequent metal CMP process'20036,589,872'Use of low-high slurry flow to eliminate copper line damages'20036,589,852'Method of replicating alignment marks for semiconductor wafer photolithography'20036,544,891'Method to eliminate post-CMP copper flake defect'20036,518,166'Liquid phase deposition of a silicon oxide layer for use as a liner on the surface of a dual damascene opening in a low dielectric constant layer'20036,515,366'Reduction of metal corrosion in semiconductor devices'20036,501,186'Bond pad having variable density via support and method for fabrication'20026,495,452'Method to reduce capacitance for copper interconnect structures'20026,465,897'Method for photo alignment after CMP planarization'20026,458,689'Use of PE-SiON or PE-Oxide for contact or via photo and for defect reduction with oxide and w chemical-mechanical polish'20026,444,371'Prevention of die loss to chemical mechanical polishing'20026,443,810'Polishing platen equipped with guard ring for chemical mechanical polishing'20026,429,118'Elimination of electrochemical deposition copper line damage for damascene processing'20026,417,106'Underlayer liner for copper damascene in low k dielectric'20026,409,587'Dual-hardness polishing pad for linear polisher and method for fabrication'20026,398,627'Slurry dispenser having multiple adjustable nozzles'20026,391,780'Method to prevent copper CMP dishing'20026,383,935'Method of reducing dishing and erosion using a sacrificial layer'20026,383,930'Method to eliminate copper CMP residue of an alignment mark for damascene processes'20026,372,632'Method to eliminate dishing of copper interconnects by the use of a sacrificial oxide layer'20026,361,704'Self stop aluminum pad for copper process'20026,358,119'Way to remove CU line damage after CU CMP'20026,350,680'Pad alignment for AlCu pad for copper process'20026,228,760'Use of PE-SiON or PE-OXIDE for contact or via photo and for defect reduction with oxide and W chemical-mechanical polish'20016,227,947'Apparatus and method for chemical mechanical polishing metal on a semiconductor wafer'20016,156,660'Method of planarization using dummy leads'20006,153,526'Method to remove residue in wolfram CMP'20006,118,185'Segmented box-in-box for improving back end overlay measurement'20006,080,656'Method for forming a self-aligned copper structure with improved planarity'20006,020,263'Method of recovering alignment marks after chemical mechanical polishing of tungsten'20006,020,249'Method for photo alignment after CMP planarization'20005,972,798'Prevention of die loss to chemical mechanical polishing'19995,933,744'Alignment method for used in chemical mechanical polishing process'19995,923,996'Method to protect alignment mark in CMP process'19995,919,714'Segmented box-in-box for improving back end overlay measurement'19995,858,854'Method for forming high contrast alignment marks'19995,827,782'Multiple etch method for optimizing Inter-Metal Dielectric (IMD) spacer layer profile'19985,773,196'Prevention of anti-reflection coating damage'19985,709,755'Method for CMP cleaning improvement'19985,661,084'Method for contact profile improvement'19975,654,234'Method for forming a void-free tungsten-plug contact in the presence of a contact opening overhang'19975,641,382'Method to remove residue of metal etch'1997

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1997–2006Patents assigned to TAIWAN SEMICONDUCTOR MFG (59)· patent assignee history
1999–2006Based in Hsinchu, TW· patent location history
1999–2000Based in Chawang, TW· patent location history
1999Based in Chunwang, TW· patent location history
2000–2002Based in Changhua County, TW· patent location history
2003Based in Hsin Chu, TW· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
TAIWAN SEMICONDUCTOR MFG591997–2006
Locations
LocationPatentsSpan
Hsinchu, TW461999–2006
Hsin Chu, TW22003
Changhua County, TW22000–2002
Chawang, TW21999–2000
Chunwang, TW11999