Inventor
Wang-Chun Huang
Inventor
Hsinchu, TW
Overview
Patents· 3 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Lprimary
H01LSemiconductor devices25%
H10DInorganic electric semiconductor devices25%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation25%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1025%
PatentTitleYear
10,326,023Semiconductor device including fin structure with two channel layers and manufacturing method thereof20199,966,469Semiconductor device including fin structure with two channel layers and manufacturing method thereof20189,601,626'Semiconductor device including fin structure with two channel layers and manufacturing method thereof'2017Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2017–2019Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (3)· patent assignee history
2017Based in Kaohsiung, TW· patent location history
2018–2019Based in Hsinchu, TW· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TAIWAN SEMICONDUCTOR MFG CO LTD | 3 | 2017–2019 |
Locations
| Location | Patents | Span |
|---|---|---|
| Hsinchu, TW | 2 | 2018–2019 |
| Kaohsiung, TW | 1 | 2017 |