Inventor
Takao Marukame
Inventor
Tokyo, JP
Overview
Patents· 47 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
G11Cprimary
G11CStatic stores19%
G06FElectric digital data processing16%
H10DInorganic electric semiconductor devices11%
H10NElectric solid-state devices not otherwise provided for9%
H03MCoding7%
H10BElectronic memory devices7%
H01LSemiconductor devices6%
H04LTransmission of digital information, e.g. telegraphic communication5%
G06NComputing arrangements based on specific computational models4%
B01DSeparation3%
PatentTitleYear
10,891,108Calculation device202110,853,721Multiplier accumulator, network unit, and network apparatus202010,579,683Memory system including key-value store202010,505,108Memcapacitor, neuro device, and neural network device201910,397,139Storage device in which forwarding-function-equipped memory nodes are mutually connected and data processing method201910,218,518Authentication server, authentication system, and authentication method201910,175,947Arithmetic device201910,078,550Memory system, error correction device, and error correction method201810,069,515Decoding device and decoding method201810,048,938Arithmetic control device, memory system including the same, information processing device, and arithmetic control method201810,044,642Storage device in which forwarding-function-equipped memory nodes are mutually connected and data processing method20189,983,818Individual identification device, storage device, individual identification system, method of individual identification, and program product20189,953,107Memory system including key-value store20189,924,117'Imaging element for use with a retina chip, imaging apparatus including the same, and semiconductor apparatus included in the same'20189,852,281Authentication system, authentication device, and authentication method20179,672,103'Decoding device, decoding method, and memory system'20179,570,181'Memory system'20179,460,316'Authentication device, authentication method, and computer program product'20169,424,927'Memory system, control system and method of predicting lifetime'20169,361,408'Memory system including key-value store'20169,262,500'Memory system including key-value store'20169,246,709'Storage device in which forwarding-function-equipped memory nodes are mutually connected and data processing method'20169,164,704'Semiconductor storage device for handling write to nonvolatile memories with data smaller than a threshold'20159,152,350'Semiconductor memory device controlling write or read process'20159,112,139'Spin transistor and memory'20159,112,131'Spin MOSFET and reconfigurable logic circuit'20159,083,423'Semiconductor circuit, D/A converter, mixer circuit, radio communication device, method for adjusting threshold voltage, and method for determining quality of transistor'20159,054,739'Error correction device, error correction method and computer program product'20158,958,239'Magnetic memory element, magnetic memory device, spin transistor, and integrated circuit'20158,849,219'DA converter and wireless communication apparatus'20148,681,034'Analog-to-digital converter for dividing reference voltage using plural variable resistors'20148,681,033'Analog-to-digital converter including differential pair circuit'20148,658,999'Semiconductor device'20148,637,946'Spin MOSFET and reconfigurable logic circuit'20148,618,590'Spin transistor, integrated circuit, and magnetic memory'20138,611,143'Memory circuit using spin MOSFETs, path transistor circuit with memory function, switching box circuit, switching block circuit, and field programmable gate array'20138,576,601'Content addressable memory'20138,487,359'Spin MOSFET and reconfigurable logic circuit using the spin MOSFET'20138,405,443'Pass transistor circuit with memory function, and switching box circuit including the pass transistor circuit'20138,385,114'Nonvolatile memory circuit using spin MOS transistors'20138,373,437'Look-up table circuits and field programmable gate array'20138,357,962'Spin transistor and method of manufacturing the same'20138,330,196'Semiconductor device and method of manufacturing the same'20128,154,916'Nonvolatile memory circuit using spin MOS transistors'20128,139,403'Spin memory and spin transistor'20128,026,561'Spin MOSFET and reconfigurable logic circuit'20117,973,351'Stack having Heusler alloy, magnetoresistive element and spin transistor using the stack, and method of manufacturing the same'2011Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2011–2021Patents assigned to TOSHIBA KK (41)· patent assignee history
2011–2020Based in Tokyo, JP· patent location history
2011–2013Based in Fuchu, JP· patent location history
2012–2016Patents assigned to MARUKAME TAKAO (21)· patent assignee history
2012–2015Patents assigned to INOKUCHI TOMOAKI (16)· patent assignee history
2012–2015Patents assigned to SAITO YOSHIAKI (16)· patent assignee history
2012–2015Patents assigned to ISHIKAWA MIZUE (14)· patent assignee history
2014–2015Based in Kanagawa, JP· patent location history
2014Based in Yokohama, JP· patent location history
2015–2021Based in Chuo-ku, JP· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TOSHIBA KK | 41 | 2011–2021 |
| MARUKAME TAKAOself | 21 | 2012–2016 |
| INOKUCHI TOMOAKI | 16 | 2012–2015 |
| SAITO YOSHIAKI | 16 | 2012–2015 |
| ISHIKAWA MIZUE | 14 | 2012–2015 |
Locations
| Location | Patents | Span |
|---|---|---|
| Tokyo, JP | 33 | 2011–2020 |
| Chuo-ku, JP | 7 | 2015–2021 |
| Kanagawa, JP | 3 | 2014–2015 |
| Fuchu, JP | 3 | 2011–2013 |
| Yokohama, JP | 1 | 2014 |