Inventor

Geeng-Lih Lin

Inventor

Hsinchu County, TW

Overview

2000–2020

Patent span

Electricity

Primary field (CPC H)

Patents· 28 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary

H10DInorganic electric semiconductor devices61%

H01LSemiconductor devices17%

H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1012%

H02HEmergency protective circuit arrangements5%

G01RMeasuring electric variables2%

H03KPulse technique2%

PatentTitleYear

10,644,501Driving circuit2020 10,177,135Integrated circuit and electrostatic discharge protection circuit thereof2019 9,893,516'ESD protection circuits'2018 9,722,097'Semiconductor device and method for manufacturing the same'2017 9,633,992'Electrostatic discharge protection device'2017 9,443,943'Semiconductor device and fabrication method thereof'2016 9,437,591'Cross-domain electrostatic discharge protection device'2016 8,921,202'Semiconductor device and fabrication method thereof'2014 8,125,028'Semiconductor devices for high power application'2012 7,755,143'Semiconductor device'2010 7,599,160'Electrostatic discharge protection circuits'2009 7,579,658'Devices without current crowding effect at the finger\'s ends'2009 7,129,546'Electrostatic discharge protection device'2006 7,098,522'High voltage device with ESD protection'2006 6,665,160'Voltage control component for ESD protection and its relevant circuitry'2003 6,621,673'Two-stage ESD protection circuit with a secondary ESD protection circuit having a quicker trigger-on rate'2003 6,590,264'Hybrid diodes with excellent ESD protection capacity'2003 6,559,508'ESD protection device for open drain I/O pad in integrated circuits with merged layout structure'2003 6,526,545'Method for generating wafer testing program'2003 6,465,848'Low-voltage-triggered electrostatic discharge protection device and relevant circuitry'2002 6,420,774'Low junction capacitance semiconductor structure and I/O buffer'2002 6,392,860'Electrostatic discharge protection circuit with gate-modulated field-oxide device'2002 6,355,960'ESD protection for open drain I/O pad in integrated circuit with parasitic field FET devices'2002 6,316,805'Electrostatic discharge device with gate-controlled field oxide transistor'2001 6,274,911'CMOS device with deep current path for ESD protection'2001 6,218,226'Method of forming an ESD protection device'2001 6,169,001'CMOS device with deep current path for ESD protection'2001 6,046,087'Fabrication of ESD protection device using a gate as a silicide blocking mask for a drain region'2000

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2000–2020Patents assigned to VANGUARD INT SEMICONDUCT CORP (28)· patent assignee history

2000–2003Based in Hsinchu, TW· patent location history

2002–2020Based in Hsinchu County, TW· patent location history

2012–2014Patents assigned to LIN GEENG-LIH (2)· patent assignee history

2012Patents assigned to LIANG WEN-JYA (1)· patent assignee history

2014Patents assigned to CHANG JUI-CHUN (1)· patent assignee history

2014Patents assigned to LIN KWANG-MING (1)· patent assignee history

2016–2018Based in Jhudong Township, TW· patent location history

2016–2017Based in Zhudong Township, TW· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
VANGUARD INT SEMICONDUCT CORP	28	2000–2020
LIN GEENG-LIHself	2	2012–2014
CHANG JUI-CHUN	1	2014
LIANG WEN-JYA	1	2012
LIN KWANG-MING	1	2014

Locations

Location	Patents	Span
Hsinchu County, TW	13	2002–2020
Hsinchu, TW	10	2000–2003
Jhudong Township, TW	3	2016–2018
Zhudong Township, TW	2	2016–2017