Inventor
Hua Feng Chen
Inventor
Hsinchu, TW
Overview
Patents· 30 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Lprimary
H01LSemiconductor devices25%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1020%
H10DInorganic electric semiconductor devices19%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1017%
H05KPrinted circuits7%
G06FElectric digital data processing5%
H03MCoding2%
F04DNon-positive-displacement pumps1%
F28DHeat-exchange apparatus, not provided for in another subclass, in which the heat-exchange media do not come into direct contact1%
G01NInvestigating or analysing materials by determining their chemical or physical properties1%
PatentTitleYear
10,930,752Contact plugs and methods forming same202110,879,110FinFET structure with controlled air gaps202010,872,980Semiconductor device and manufacturing method thereof202010,872,963Substrate resistor and method of making same202010,863,649Air generating system for reservoir tank, immersion cooling apparatus having the same, and method for operating the same2020RE048304Source and drain dislocation fabrication in FinFETs202010,764,990Heat-dissipating module having an elastic mounting structure202010,727,061Method for integrated circuit patterning202010,720,358Semiconductor device having a liner layer with a configured profile and method of fabricating thereof202010,681,800Thermal module mounting structure202010,553,481Vias for cobalt-based interconnects and methods of fabrication thereof202010,516,030Contact plugs and methods forming same201910,510,751FinFET isolation structure and method for fabricating the same201910,332,786Method for manufacturing a semiconductor device201910,304,942Sidewall spacers for self-aligned contacts201910,297,669Substrate resistor and method of making same201910,088,440Heat dissipation estimating method201810,074,558FinFET structure with controlled air gaps20189,941,125Method for integrated circuit patterning20189,882,023'Sidewall spacers for self-aligned contacts'20189,536,980'Gate spacers and methods of forming same'20179,496,325'Substrate resistor and method of making same'20169,282,679'Electronic device with phase change material microcapsule layer'20169,255,585'Fan structure and casing structure'20169,230,828'Source and drain dislocation fabrication in FinFETs'20169,143,164'Scalable serializer'20158,932,936'Method of forming a FinFET device'20158,897,012'Electronic device and heat dissipation module thereof'20148,866,235'Source and drain dislocation fabrication in FinFETs'20148,514,108'Single stage and scalable serializer'2013Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2013–2015Based in Queen Creek, AZ, US· patent location history
2014–2018Patents assigned to INVENTEC CORP (4)· patent assignee history
2014–2018Patents assigned to INVENTEC PUDONG TECH CORP (4)· patent assignee history
2014–2016Patents assigned to TAIWAN SEMICONDUCTOR MFG (3)· patent assignee history
2014–2021Based in Hsinchu, TW· patent location history
2014–2018Based in Taipei, TW· patent location history
2016–2021Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (18)· patent assignee history
2020Patents assigned to ADLINK TECH INC (2)· patent assignee history
2020Based in New Taipei, TW· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TAIWAN SEMICONDUCTOR MFG CO LTD | 18 | 2016–2021 |
| INVENTEC CORP | 4 | 2014–2018 |
| INVENTEC PUDONG TECH CORP | 4 | 2014–2018 |
| TAIWAN SEMICONDUCTOR MFG | 3 | 2014–2016 |
| ADLINK TECH INC | 2 | 2020 |
Locations
| Location | Patents | Span |
|---|---|---|
| Hsinchu, TW | 21 | 2014–2021 |
| Taipei, TW | 4 | 2014–2018 |
| New Taipei, TW | 3 | 2020 |
| Queen Creek, AZ, US | 2 | 2013–2015 |